STP80NF10 datasheet(3/9 Pages) STMICROELECTRONICS

No. de pieza	STP80NF10

Descripción Electrónicos	N-CHANNEL 100V - 0.012ohm - 80A TO-220/TO-220FP LOW GATE CHARGE STripFET?줚I POWER MOSFET

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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STP80NF10/STP80NF10FP

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

SWITCHING OFF

SOURCE DRAIN DIODE

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on Delay Time

VDD = 50V, ID = 40A

RG = 4.7Ω VGS = 10V

(see test circuit, Figure 3)

40

ns

tr

Rise Time

145

ns

Qg

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD = 80V, ID = 80A,

VGS = 10V

140

23

51

189

nC

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(off)

tf

Turn-off-Delay Time

Fall Time

VDD = 50V, ID = 40A,

RG = 4.7Ω, VGS = 10V

(see test circuit, Figure 3)

134

115

ns

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain Current

80

A

ISDM (2)

Source-drain Current (pulsed)

320

A

VSD (1)

Forward On Voltage

ISD = 80A, VGS = 0

1.3

V

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD = 80A, di/dt = 100A/µs,

VDD = 50V, Tj = 150°C

(see test circuit, Figure 5)

155

0.85

11

ns

µC

A

Safe Operating Area for TO-220FP

Safe Operating Area for TO-220

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STP80NF10 Datasheet(PDF) 3 Page - STMicroelectronics

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