tm

January 2008

©2008 Fairchild Semiconductor Corporation

FDC855N Rev.C

www.fairchildsemi.com

1

FDC855N

30V, 6.1A, 27m

Ω

Features

standard SO-8; low profile (1mm thick).

RoHS Compliant

General Description

This N-Channel Logic Level MOSFET is an efficient solution for

low voltage and battery powered applications. Utilizing Fairchild

possesses minimized on-state resistance to optimize the power

consumption. They are ideal for applications where in-line power

loss is critical.

Application

Power Management in Notebook, Hard Disk Drive

Thermal Characteristics

Package Marking and Ordering Information

Symbol

Parameter

Ratings

Units

Drain to Source Voltage

30

V

Gate to Source Voltage

±20

V

Drain Current -Continuous

(Note 1a)

6.1

A

-Pulsed

20

Power Dissipation

(Steady State)

(Note 1a)

1.6

W

Power Dissipation

(Steady State)

(Note 1b)

0.8

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Resistance, Junction to Case

(Note 1)

30

°C/W

Thermal Resistance, Junction to Ambient

(Note 1a)

78

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

.855

FDC855N

SuperSOT-6

7”

8 mm

3000 units

S

D

D

G

D

D

Pin 1

D

D

G

D

D

S