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FSB50450S Datasheet(PDF) 4 Page - Fairchild Semiconductor |
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FSB50450S Datasheet(HTML) 4 Page - Fairchild Semiconductor |
4 / 8 page 4 www.fairchildsemi.com FSB50450S Rev. B Recommended Operating Conditions Note: (1) It is recommended the bootstrap diode D1 to have soft and fast recovery characteristics with 600-V rating (2) Parameters for bootsrap circuit elements are dependent on PWM algorithm. For 15 kHz of switching frequency, typical example of parameters is shown above. (3) RC coupling(R5 and C5) at each input (indicated as dotted lines) may be used to prevent improper input signal due to surge noise. Signal input of SPM ®is compatible with standard CMOS or LSTTL outptus. (4) Bold lines should be short and thick in PCB pattern to have small stray inductance of circuit, which results in the reduction of surge voltage. Bypass capacitors such as C1, C2 and C3 should have good high-frequency characteristics to absorb high-frequency ripple current. Figure 2. Recommended CPU Interface and Bootstrap Circuit with Parameters Note: Attach the thermocouple on top of the heatsink-side of SPM® (between SPM® and heatsink if applied) to get the correct temperature measurement. Figure 3. Case Temperature Measurement Symbol Parameter Conditions Value Units Min. Typ. Max. VPN Supply Voltage Applied between P and N - 300 400 V VCC Control Supply Voltage Applied between VCC and COM 13.5 15 16.5 V VBS High-side Bias Voltage Applied between VB and output(U, V, W) 13.5 15 16.5 V VIN(ON) Input ON Threshold Voltage Applied between IN and COM 3.0 - VCC V VIN(OFF) Input OFF Threshold Voltage 0 - 0.6 V tdead Blanking Time for Preventing Arm-short VCC=VBS=13.5 ~ 16.5V, TJ ≤ 150°C 1.0 - - μs fPWM PWM Switching Frequency TJ ≤ 150°C - 15 - kHz TC Case Temperature TJ ≤ 150°C -20 - 125 °C COM VCC LIN HIN VB HO VS LO P N R 3 Inverter Output C 3 R 1 D 1 C 1 R 2 Micom 15-V Line 10 μF One-Leg Diagram of SPM These values depend on PWM control algorithm * Example of bootstrap paramters: C 1 = C2 = 1μF ceramic capacitor, R 1 = 56Ω, R2 = 20Ω R 5 C 5 HIN LIN V DC 0 0 0 1 1 0 1 1 Open Open Output Z 0 V DC Forbidden Z Note Both FRFET Off Low-side FRFET On High-side FRFET On Shoot-through Same as (0, 0) C 2 Case Tem perature(Tc) Detecting Point 14.50mm 3.80mm MOSFET Case Tem perature(Tc) Detecting Point 14.50mm 3.80mm MOSFET |
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