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2N7000 Datasheet(PDF) 5 Page - STMicroelectronics

No. de pieza 2N7000
Descripción Electrónicos  N-channel 60V - 1.8廓 - 0.35A - SOT23-3L / TO-92 STripFET??Power MOSFET
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

2N7000 Datasheet(HTML) 5 Page - STMicroelectronics

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2N7000 - 2N7002
Electrical characteristics
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Table 6.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area.
Source-drain current
Source-drain current
(pulsed)
0.35
1.40
A
A
VSD
(2)
2.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage
ISD = 1A, VGS = 0
1.2
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 1A, di/dt = 100A/µs,
VDD = 20V, Tj = 150°C
(see Figure 18)
32
25
1.6
ns
nC
A


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