BUL810 datasheet(3/10 Pages) STMICROELECTRONICS

No. de pieza	BUL810

Descripción Electrónicos	High voltage fast-switching NPN power transistor

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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BUL810

Electrical characteristics

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Electrical characteristics

(Tcase = 25 °C unless otherwise specified)

Table 4.

Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICES

Collector cut-off current

(VBE = 0)

VCE = 1000 V

VCE = 1000 V TC = 125 °C

100

500

µA

ICEO

Collector cut-off current

(IB = 0)

VCE = 450 V

250

µA

VCEO(sus)

(1) Collector-emitter

sustaining voltage

(IB = 0)

IC = 100 mA

450

V

VEBO

Emitter-base voltage

(IC = 0)

IE = 10 mA

9V

VCE(sat)

(1)

1.

Pulse duration = 300 µs, duty cycle

≤1.5%

Collector-emitter

saturation voltage

IC = 5 A

IB = 1 A

IC = 8 A

IB = 1.6 A

IC = 12 A

IB = 2.4 A

1

1.5

5

V

VBE(sat)

(1)

Base-emitter saturation

voltage

IC = 5 A

IB = 1 A

IC = 8 A

IB = 1.6 A

1.3

1.6

V

hFE

(1)

DC current gain

IC = 10 mA

VCE = 5 V

IC = 5 A

VCE = 5 V

10

40

ts

tf

Inductive load

Storage time

Fall time

IC = 8 A

IB1 = 1.6 A

VCL = 350 V

L = 200 µH

VBE(off) = -5 V RBB = 0.4 Ω

1.5

55

2.3

110

µs

ns

ts

tf

Inductive load

Storage time

Fall time

IC = 8 A

IB1 = 1.6 A

VCL = 350 V

L = 200 µH

VBE(off) = -5 V

RBB = 0.4 Ω

Tc = 100 °C

1.9

80

µs

ns

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