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STB7N52K3 Datasheet(Hoja de datos) 5 Page - STMicroelectronics

No. de Pieza. STB7N52K3
Descripción  N-channel 525 V, 0.84 Ω, 6.3 A, D2PAK, DPAK, TO-220FP, TO-220 SuperMESH3™ Power MOSFET
Descarga  15 Pages
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Fabricante  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
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 5 page
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STB7N52K3 - STD7N52K3 - STF7N52K3 - STP7N52K3
Electrical characteristics
5/15
Table 8.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ. Max. Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
6.3
25
A
A
VSD
(2)
2.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage
ISD = 6.3 A, VGS = 0
1.6
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 6.3 A, di/dt = 100 A/µs
VDD = 30 V (see Figure 7)
TBD
TBD
TBD
ns
nC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 6.3 A, di/dt = 100 A/µs
VDD = 30 V, Tj = 150 °C
(see
Figure 7)
TBD
TBD
TBD
ns
nC
A
Table 9.
Gate-source Zener diode
Symbol
Parameter
Test conditions
Min
Typ
Max Unit
BVGSO
(1)
1.
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components
Gate-source breakdown
voltage
Igs=± 1 mA (open drain)
30
V




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