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STP15NM60ND Datasheet(PDF) 1 Page - STMicroelectronics

No. de pieza STP15NM60ND
Descripción Electrónicos  N-channel 600 V - 0.27 廓 - 14 A - FDmesh??II Power MOSFET D2PAK, I2PAK, TO-220, TO-220FP, TO-247
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP15NM60ND Datasheet(HTML) 1 Page - STMicroelectronics

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April 2008
Rev 2
1/19
19
Features
The worldwide best RDS(on)* area amongst the
fast recovery diode devices
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Extremely high dv/dt and avalanche
capabilities
Application
Switching applications
Description
The FDmesh™ II series belongs to the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company's strip layout
and associates all advantages of reduced on-
resistance and fast switching with an intrinsic fast-
recovery body diode.Strongly recommended for
bridge topologies, in ZVS phase-shift converters.
Figure 1.
Internal schematic diagram
Type
VDSS (@Tjmax) RDS(on) max
ID
STB15NM60ND
STF15NM60ND
STI15NM60ND
STP15NM60ND
STW15NM60ND
650 V
0.299
14 A
14 A
14 A(1)
14 A
14 A
1.
Limited only by maximum temperature allowed
TO-220
TO-220FP
I²PAK
1
2
3
1
2
3
1
2
3
TO-247
D2PAK
1
3
1
2
3
Table 1.
Device summary
Order codes
Marking
Package
Packaging
STB15NM60ND
15NM60ND
D2PAK
Tape and reel
STF15NM60ND
15NM60ND
TO-220FP
Tube
STI15NM60ND
15NM60ND
I2PAK
Tube
STP15NM60ND
15NM60ND
TO-220
Tube
STW15NM60ND
15NM60ND
TO-247
Tube
STB15NM60ND - STF/I15NM60ND
STP15NM60ND - STW15NM60ND
N-channel 600 V - 0.27
Ω - 14 A - FDmesh™ II Power MOSFET
D2PAK, I2PAK, TO-220, TO-220FP, TO-247
www.st.com


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