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2SA1190ETZ-E Datasheet(PDF) 1 Page - Renesas Technology Corp |
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2SA1190ETZ-E Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 7 page Rev.2.00 Aug 10, 2005 page 1 of 6 2SA1190 Silicon PNP Epitaxial REJ03G0640-0200 (Previous ADE-208-1012) Rev.2.00 Aug.10.2005 Application • Low frequency low noise amplifier • Complementary pair with 2SC2855 and 2SC2856 Outline 1. Emitter 2. Collector 3. Base RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1)) 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Collector to base voltage VCBO –90 V Collector to emitter voltage VCEO –90 V Emitter to base voltage VEBO –5 V Collector current IC –100 mA Emitter current IE 100 mA Collector power dissipation PC 400 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C |
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