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2SK1318-E Datasheet(PDF) 4 Page - Renesas Technology Corp |
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2SK1318-E Datasheet(HTML) 4 Page - Renesas Technology Corp |
4 / 7 page 2SK1318 Rev.2.00 Sep 07, 2005 page 4 of 6 0.25 40 160 Case Temperature TC (°C) 0.2 0.05 0 80 120 0 0.1 0.15 ID = 20 A Pulse Test 10 A –40 Static Drain to Source on State Resistance vs. Temperature VGS = 4 V VGS = 10 V 5 A 10 A 5 A 100 250 Drain Current ID (A) 50 5 15 20 1 10 20 Forward Transfer Admittance vs. Drain Current Tc = –25 °C VDS = 10 V Pulse Test 0.5 2 10 25 °C 75 °C 500 120 Reverse Drain Current IDR (A) 200 20 0.5 2 10 5 50 100 di/dt = 50 A/ µs VGS = 0, Ta = 25°C Pulse Test 0.2 10 5 Body to Drain Diode Reverse Recovery Time 10,000 20 50 Drain to Source Voltage VDS (V) 1,000 10 30 40 100 0 10 Crss Coss Ciss VGS = 0 f = 1 MHz Typical Capacitance vs. Drain to Source Voltage 200 40 100 Gate Charge Qg (nc) 160 40 20 60 80 0 80 120 VDS 20 16 4 0 8 12 VDD = 100 V 50 V 25 V ID = 20 A VGS Dynamic Input Characteristics 25 V 50 V VDD = 100 V 500 120 Drain Current ID (A) 200 20 0.5 2 10 5 50 100 0.2 10 5 tf td (on) tr VGS = 10 V, PW = 2 µs duty 1%, VDD 30 V td (off) = . . Switching Characteristics < = |
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