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2SK2925 Datasheet(PDF) 2 Page - Renesas Technology Corp

No. de Pieza. 2SK2925
Descripción  Silicon N Channel MOS FET High Speed Power Switching
Descarga  9 Pages
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Fabricante  RENESAS [Renesas Technology Corp]
Página de inicio  http://www.renesas.com
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2SK2925 Datasheet(HTML) 2 Page - Renesas Technology Corp

   
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2SK2925(L),2SK2925(S)
Rev.5.00 Sep 07, 2005 page 2 of 8
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
60
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
10
A
Drain peak current
ID(pulse)
Note1
40
A
Body-drain diode reverse drain current
IDR
10
A
Avalanche current
IAP
Note3
10
A
Avalanche energy
EAR
Note3
8.5
mJ
Channel dissipation
Pch
Note2
20
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25
°C
3. Value at Tch = 25
°C, Rg
≥ 50 Ω
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V(BR)DSS
60
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±20
V
IG =
±100 µA, VDS = 0
Gate to source leak current
IGSS
±10
µA
VGS =
±16 V, VDS = 0
Zero gate voltage drain current
IDSS
10
µA
VDS = 60 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.5
2.5
V
ID = 1 mA, VDS = 10 V
RDS(on)
0.060
0.080
ID = 5 A, VGS = 10 V
Note4
Static drain to source on state
resistance
RDS(on)
0.095
0.160
ID = 5 A, VGS = 4 V
Note4
Forward transfer admittance
|yfs|
5
8
S
ID = 5 A, VDS = 10 V
Note4
Input capacitance
Ciss
350
pF
Output capacitance
Coss
190
pF
Reverse transfer capacitance
Crss
70
pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time
td(on)
10
ns
Rise time
tr
55
ns
Turn-off delay time
td(off)
60
ns
Fall time
tf
70
ns
ID = 5 A, VGS = 10 V,
RL = 6
Body–drain diode forward voltage
VDF
0.9
V
IF = 10 A, VGS = 0
Body–drain diode reverse
recovery time
trr
50
ns
IF = 10 A, VGS = 0,
diF/ dt =50A/
µs
Note:
4. Pulse test


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