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2SK2912L-E Datasheet(PDF) 4 Page - Renesas Technology Corp |
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2SK2912L-E Datasheet(HTML) 4 Page - Renesas Technology Corp |
4 / 9 page 2SK2912(L), 2SK2912(S) Rev.2.00 Sep 07, 2005 page 4 of 8 Case Temperature TC (°C) Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current Drain Current ID (A) Body to Drain Diode Reverse Recovery Time Reverse Drain Current IDR (A) Typical Capacitance vs. Drain to Source Voltage Drain to Source Voltage VDS (V) Dynamic Input Characteristics Gate Charge Qg (nc) Switching Characteristics Drain Current ID (A) 0.05 0.04 0.03 0.02 0.01 –40 0 40 80 120 160 0 1 2 5 10 20 50 100 100 50 10 20 2 5 1 ID = 20 A VGS = 4 V 10 V 10 A 10, 20 A 50 A Pulse Test 25 °C Tc = –25 °C 75 °C VDS = 10 V Pulse Test 0.1 0.3 1 3 10 30 100 010 20 30 40 50 50 2000 5000 1000 100 200 500 100 80 60 40 20 0 20 16 12 8 4 20 40 60 80 100 0 1000 300 30 100 3 10 1 0.1 0.3 1 3 10 30 100 1000 500 100 200 20 50 10 ID = 40 A VGS VDS VDD = 50 V 25 V 10 V di / dt = 50 A / µs VGS = 0, Ta = 25°C VGS = 0 f = 1 MHz Ciss Coss Crss VDD = 10 V 25 V 50 V VGS = 10 V, VDD = 30 V PW = 5 µs, duty < 1 % tf tr td(on) td(off) |
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