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2SC2620QCTL-E Datasheet(Hoja de datos) 2 Page - Renesas Technology Corp

No. de Pieza. 2SC2620QCTL-E
Descripción  Silicon NPN Epitaxial Planar
Descarga  8 Pages
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Fabricante  RENESAS [Renesas Technology Corp]
Página de inicio  http://www.renesas.com
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 2 page
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2SC2620
Rev.2.00 Aug 10, 2005 page 2 of 7
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown voltage
V(BR)CBO
30
V
IC = 10
µA, IE = 0
Collector to emitter breakdown voltage
V(BR)CEO
20
V
IC = 1 mA, RBE =
Emitter to base breakdown voltage
V(BR)EBO
4
V
IE = 10
µA, IC = 0
Collector cutoff current
ICBO
0.5
µA
VCB = 10 V, IC = 0
Emitter cutoff current
IEBO
0.5
µA
VEB = 2 V, IC = 0
DC current transfer ratio
hFE*
1
60
200
VCE = 6 V, IC = 1 mA
Collector to emitter saturation voltage
VCE(sat)
0.17
V
IC = 20 mA, IB = 4 mA
Base to emitter voltage
VBE
0.72
V
VCE = 6 mA, IC = 1 mA
Gain bandwidth product
fT
940
MHz
VCE = 6 V, IC = 5 mA
Collector output capacitance
Cob
0.9
pF
VCB = 10 V, IE = 0, f = 1 MHz
Note:
1. The 2SC2620 is grouped by hFE as follows.
Grade
B
C
Mark
QB
QC
hFE
60 to 120
100 to 200




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