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2SC3127ID-TL-E Datasheet(Hoja de datos) 2 Page - Renesas Technology Corp

No. de Pieza. 2SC3127ID-TL-E
Descripción  Silicon NPN Epitaxial
Descarga  8 Pages
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Fabricante  RENESAS [Renesas Technology Corp]
Página de inicio  http://www.renesas.com
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 2 page
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2SC3127
Rev.3.00 Aug 10, 2005 page 2 of 7
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown voltage
V(BR)CBO
20
V
IC = 10
µA, IE = 0
Collector to emitter breakdown voltage
V(BR)CEO
12
V
IC = 1 mA, RBE =
Emitter cutoff current
IEBO
10
µA
VEB = 3 V, IC = 0
Collector cutoff current
ICBO
0.5
µA
VCB = 12 V, IE = 0
DC current transfer ratio
hFE
30
90
200
VCE = 5 V, IC = 20 mA
Collector output capacitance
Cob
0.9
1.5
pF
VCB = 5 V, IE = 0, f = 1 MHz
Gain bandwidth product
fT
3.5
4.5
GHz
VCE = 5 V, IC = 20 mA
Power gain
PG
10.5
dB
VCE = 5 V, IC = 20 mA,
f = 900 MHz
Noise figure
NF
2.2
dB
VCE = 5 V, IC = 5 mA,
f = 900 MHz




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