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2SK3447TZ-E Datasheet(PDF) 2 Page - Renesas Technology Corp |
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2SK3447TZ-E Datasheet(HTML) 2 Page - Renesas Technology Corp |
2 / 7 page 2SK3447 Rev.7.00 Sep 07, 2005 page 2 of 6 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Value Unit Drain to source voltage VDSS 150 V Gate to source voltage VGSS ±20 V Drain current ID 1 A Drain peak current ID (pulse) Note 1 4 A Body-drain diode reverse drain current IDR 1 A Channel dissipation Pch Note 2 0.9 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Ta = 25 °C Electrical Characteristics (Ta = 25 °C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V (BR) DSS 150 — — V ID = 10 mA, VGS = 0 Gate to source breakdown voltage V (BR) GSS ±20 — — V IG = ±100 µA, VDS = 0 Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 Zero gate voltage drain current IDSS — — 1 µA VDS = 150 V, VGS = 0 Gate to source cutoff voltage VGS (off) 1.0 — 2.5 V VDS = 10 V, ID = 1 mA RDS (on) — 1.5 1.95 Ω ID = 0.5 A, VGS = 10 V Note 3 Static drain to source on state resistance RDS (on) — 1.9 2.5 Ω ID = 0.5 A, VGS = 4 V Note 3 Forward transfer admittance |yfs| 0.5 0.9 — S ID = 0.5 A, VDS = 10 V Note 3 Input capacitance Ciss — 85 — pF Output capacitance Coss — 36 — pF Reverse transfer capacitance Crss — 18 — pF VDS = 10 V VGS = 0 f = 1 MHz Total gate charge Qg — 4.5 — nC Gate to source charge Qgs — 0.8 — nC Gate to drain charge Qgd — 1.6 — nC VDD = 100 V VGS = 10 V ID = 1 A Turn-on delay time td (on) — 7 — ns Rise time tr — 6 — ns Turn-off delay time td (off) — 21 — ns Fall time tf — 10 — ns VGS = 10 V ID = 0.5 A RL = 60 Ω Body-drain diode forward voltage VDF — 1.0 1.5 V IF = 1 A, VGS = 0 Note 3 Body-drain diode reverse recovery time trr — 60 — ns IF = 1 A, VGS = 0 diF/dt = 100 A/ µs Note: 3. Pulse test |
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