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2SJ471-E Datasheet(PDF) 2 Page - Renesas Technology Corp |
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2SJ471-E Datasheet(HTML) 2 Page - Renesas Technology Corp |
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2 / 7 page  2SJ471 Rev.2.00 Sep 07, 2005 page 2 of 6 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Value Unit Drain to source voltage VDSS –30 V Gate to source voltage VGSS ±20 V Drain current ID –30 A Drain peak current ID (pulse) Note 1 –120 A Body-Drain diode reverse Drain current IDR –30 A Channel dissipation Pch Note 2 30 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25 °C Electrical Characteristics (Ta = 25 °C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V (BR) DSS –30 — — V ID = –10 mA, VGS = 0 Gate to source breakdown voltage V (BR) GSS ±20 — — V IG = ±100 µA, VDS = 0 Zero gate voltage drain current IDSS — — –10 µA VDS = –30 V, VGS = 0 Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 Gate to source cutoff voltage VGS (off) –1.0 — –2.0 V ID = –1 mA, VDS = –10 V RDS (on) 1 — 25 35 m Ω ID = –15 A, VGS = –10 V Note 3 Static drain to source on state resistance RDS (on) 2 — 40 60 m Ω ID = –15 A, VGS = –4 V Note 3 Forward transfer admittance |yfs| 12 20 — S ID = –15 A, VDS = –10 V Note 3 Input capacitance Ciss — 1700 — pF Output capacitance Coss — 950 — pF Reverse transfer capacitance Crss — 260 — pF VDS = –10 V VGS = 0 f = 1 MHz Turn-on delay time td (on) — 20 — ns Rise time tr — 290 — ns Turn-off delay time td (off) — 170 — ns Fall time tf — 130 — ns ID = –15 A VGS = –10 V RL = 0.67 Ω Body-Drain diode forward voltage VDF — –1.1 — V IF = –30 A, VGS = 0 Body-Drain diode reverse recovery time trr — 70 — ns IF = –30 A, VGS = 0 diF/dt = 50 A/ µs Note: 3. Pulse test |
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