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2SK3160-E Datasheet(Hoja de datos) 2 Page - Renesas Technology Corp

No. de Pieza. 2SK3160-E
Descripción  Silicon N Channel MOS FET High Speed Power Switching
Descarga  8 Pages
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Fabricante  RENESAS [Renesas Technology Corp]
Página de inicio  http://www.renesas.com
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2SK3160
Rev.3.00 Sep 07, 2005 page 2 of 7
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
200
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
10
A
Drain peak current
ID(pulse)
Note1
40
A
Body-drain diode reverse drain current
IDR
10
A
Avalanche current
IAP
Note3
10
A
Avalanche energy
EAR
Note3
6.6
mJ
Channel dissipation
Pch
Note2
30
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25
°C
3. Value at Tch = 25
°C, Rg
≥ 50 Ω
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V(BR)DSS
200
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±20
V
IG =
±100 µA, VDS = 0
Gate to source leak current
IGSS
±10
µA
VGS =
±16 V, VDS = 0
Zero gate voltage drain current
IDSS
10
µA
VDS = 200 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.0
2.5
V
ID = 1 mA, VDS = 10 V
RDS(on)
130
170
m
ID = 5 A, VGS = 10 V
Note4
Static drain to source on state
resistance
RDS(on)
150
190
m
ID = 5 A, VGS = 4 V
Note4
Forward transfer admittance
|yfs|
8
13
S
ID = 5 A, VDS = 10 V
Note4
Input capacitance
Ciss
1100
pF
Output capacitance
Coss
300
pF
Reverse transfer capacitance
Crss
150
pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time
td(on)
15
ns
Rise time
tr
75
ns
Turn-off delay time
td(off)
280
ns
Fall time
tf
110
ns
ID = 5 A, VGS = 10 V,
RL = 6
Body–drain diode forward voltage
VDF
0.85
V
IF = 10 A, VGS = 0
Body–drain diode reverse recovery
time
trr
100
ns
IF = 10 A, VGS = 0
diF/ dt = 50 A/
µs
Note:
4. Pulse test




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