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STU36NB20 Datasheet(Hoja de datos) 1 Page - STMicroelectronics

No. de Pieza. STU36NB20
Descripción  N-CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
Descarga  6 Pages
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Fabricante  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
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STU36NB20
N-CHANNEL ENHANCEMENT MODE
PowerMESH
™ MOSFET
PRELIMINARY DATA
s
TYPICAL RDS(on) = 0.052
s
EXTREMELY HIGH dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
VERY LOW INTRINSIC CAPACITANCES
s
GATE CHARGE MINIMIZED
s
± 30V GATE TO SOURCE VOLTAGE RATING
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process,
SGS-Thomson
has
designed
an
advanced
family
of
power
MOSFETs
with
outstanding performances.
The
new
patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s
SWITCH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Uni t
VDS
Drain-source Volt age (VGS =0)
200
V
VDGR
Drain- gate Voltage (RGS =20 k
Ω)
200
V
VGS
Gat e-source Voltage
± 30
V
ID
Drain Current (continuous) at Tc =25
o C36
A
ID
Drain Current (continuous) at Tc =100
oC23
A
IDM(
•)
Drain Current (pulsed)
144
A
Ptot
Tot al Dissipation at Tc =25
oC160
W
Derating F act or
1.28
W/
oC
dv/dt(1)
Peak Diode Recovery voltage slope
5.5
V/ ns
Tstg
Storage T emperat ure
-65 to 150
oC
Tj
Max. O perating Junction Temperature
150
oC
(
•) Pulse width limited by safe operating area
(1)ISD
≤36A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX
January 1998
TYPE
VDSS
RDS(on)
ID
STU36NB20
200 V
< 0.065
36 A
1
2
3
Max220
1/6




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