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6N1135 Datasheet(PDF) 1 Page - Vishay Siliconix

No. de pieza 6N1135
Descripción Electrónicos  High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output, 110 °C Rated
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Fabricante Electrónico  VISHAY [Vishay Siliconix]
Página de inicio  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

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High Speed Optocoupler, 1 MBd,
Photodiode with Transistor Output, 110 °C Rated
www.vishay.com
For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83909
160
Rev. 1.6, 07-May-08
6N1135/6N1136
Vishay Semiconductors
DESCRIPTION
The 6N1135 and 6N1136 are 110 °C rated optocouplers with
a GaAIAs infrared emitting diode, optically coupled with an
integrated photo detector which consists of a photo diode
and a high-speed transistor in a DIP-8 plastic package.
Signals can be transmitted between two electrically
separated circuits up to frequencies of 2.0 MHz. The
potential difference between the circuits to be coupled
should not exceed the maximum permissible reference
voltages.
FEATURES
• Operating temperature from - 55 °C to + 110 °C
• Isolation test voltages: 5300 VRMS
• TTL compatible
• High bit rates: 1.0 MBd
• Bandwidth 2.0 MHz
• Open-collector output
• External base wiring possible
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and
WEEE 2002/96/EC
AGENCY APPROVALS
• UL1577, file no. E52744 system code H or J
• DIN EN 60747-5-5
• CUL - file no. E52744, equivalent to CSA bulletin 5A
Note
For additional information on the available options refer to option information.
i179081
1
2
3
4
8
7
6
5
C(VCC)
NC
A
C
NC
B(VB)
C(VO)
E(GND)
ORDER INFORMATION
PART
REMARKS
6N1135
CTR
≥ 7 %, DIP-8
6N1136
CTR
≥ 19 %, DIP-8
6N1135-X007
CTR
≥ 7 %, SMD-8 (option 7)
6N1136-X006
CTR
≥ 19 %, DIP-8 400 mil (option 6)
6N1136-X007
CTR
≥ 19 %, SMD-8 (option 7)
6N1136-X009
CTR
≥ 19 %, SMD-8 (option 9)
ABSOLUTE MAXIMUM RATINGS (1)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
VR
5.0
V
Forward current
IF
25
mA
Peak forward current
t = 1.0 ms, duty cycle 50 %
IFM
50
mA
Maximum surge forward current
t
≤ 1.0 µs, 300 pulses/s
IFSM
1.0
A
Thermal resistance
Rth
700
K/W
Power dissipation
Tamb = 70 °C
Pdiss
45
mW
OUTPUT
Supply voltage
VCC
- 0.5 to 15
V
Output voltage
VO
- 0.5 to 15
V
Emitter base voltage
VEBO
5.0
V
Output current
IO
8.0
mA
Maximum Output current
16
mA
Base current
IB
5.0
mA
Thermal resistance
300
K/W
Power dissipation
Tamb = 70 °C
Pdiss
100
mW


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