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TPS55386PWPR Datasheet(PDF) 5 Page - Texas Instruments

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No. de pieza TPS55386PWPR
Descripción Electrónicos  3-A DUAL NON-SYNCHRONOUS CONVERTER WITH INTEGRATED HIGH-SIDE MOSFET AND EXTERNAL COMPENSATION
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Fabricante Electrónico  TI [Texas Instruments]
Página de inicio  http://www.ti.com
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TPS55386PWPR Datasheet(HTML) 5 Page - Texas Instruments

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TPS55383
,, TPS55386
www.ti.com ......................................................................................................................................................................................... SLUS818 – SEPTEMBER 2008
ELECTRICAL CHARACTERISTICS (continued)
–40°C
≤ TJ ≤ +125°C, VPVDD1 = VPVDD2 = 12 V, unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
OVERCURRENT PROTECTION
ICL1
Current limit Channel 1
3.6
4.5
5.6
VILIM2 = VBP
3.6
4.5
5.6
A
ICL2
Current limit Channel 2
VILIM2 = (floating)
2.4
3.0
3.6
VILIM2 = GND
1.15
1.50
1.75
VUV1
Low-level output threshold to declare a fault
Measured at feedback pin.
670
730
mV
VUV2
THICCUP
(3)
Hiccup timeout
10
ms
tON1(oc)
(3)
Minimum overcurrent pulse width
90
150
ns
tON2(oc)
(3)
BOOTSTRAP
RBOOT1,
From BP to BOOT1 or BP to BOOT2,
Bootstrap switch resistance
18
Ω
RBOOT2
IEXT = 50 mA
OUTPUT STAGE (Channel 1 and Channel 2)
TJ = +25°C, VPVDD2 = 8 V
85
RDS(on)
(3)
MOSFET on resistance plus bond wire resistance
m
Ω
–40°C < TJ < +125°C, VPVDD2 = 8 V
85
165
tON(min)
(3)
Minimum controllable pulse width
ISWx peak current > 1 A
(4)
100
200
ns
DMIN
Minimum Duty Cycle
VFB = 0.9 V
0
%
TPS55383 fSW = 300 kHz
90
95
%
DMAX
Maximum Duty Cycle
TPS55386 fSW = 600 kHz
85
90
%
ISW
Switching node leakage current (sourcing)
Outputs OFF
2
12
µA
THERMAL SHUTDOWN
TSD
(3)
Shutdown temperature
148
°C
TSD(hys)
(3)
Hysteresis
20
(3)
Ensured by design. Not production tested.
(4)
See Figure 14 for ISWx peak current <1 A.
Copyright © 2008, Texas Instruments Incorporated
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Product Folder Link(s): TPS55383 TPS55386


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