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2SC2362K Datasheet(PDF) 1 Page - Sanyo Semicon Device |
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2SC2362K Datasheet(HTML) 1 Page - Sanyo Semicon Device |
1 / 5 page 2SA1016, 1016K / 2SC2362, 2362K No.0572-1/5 Specifications ( ) : 2SA1016, 1016K Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions 2SA1016, 2SC2362 2SA1016K, 2SC2362K Unit Collector-to-Base Voltage VCBO (--)120 (--)150 V Collector-to-Emitter Voltage VCEO (--)100 (--)120 V Emitter-to-Base Voltage VEBO (--)5 V Collector Current IC (--)50 mA Collector Current (Pulse) ICP (--)100 mA Collector Dissipation PC 400 mW Junction Temperature Tj 125 °C Storage Temperature Tstg --55 to +125 °C Electrical Characteristics at Ta=25°C Ratings Parameter Symbol Conditions min typ max Unit Collector Cutoff Current ICBO VCB=(--)80V, IE=0A (--)1.0 μA Emitter Cutoff Current IEBO VEB=(--)4V, IC=0A (--)1.0 μA DC Current Gain hFE VCE=(--)6V, IC=(--)1mA 160* 960* Gain-Bandwidth Product fT VCE=(--)6V, IC=(--)1mA (110)130 MHz Output Capacitance Cob VCB=(--)10V, f=1MHz (2.2)1.8 pF Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)10mA, IB=(--)1mA (--)0.5 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)10μA, IE=0A [2SA1016, 2SC2362] (--)120 V IC=(--)10μA, IE=0A [2SA1016K, 2SC2362K] (--)150 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)1mA, RBE=∞ [2SA1016, 2SC2362] (--)100 V IC=(--)1mA, RBE=∞ [2SA1016K, 2SC2362K] (--)120 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)10μA, IC=0A (--)5 V Continued on next page. * : The 2SA1016,1016K/2SC2362, 2362K are classified by 1mA hFE as follows : Rank F G H hFE 160 to 320 280 to 560 480 to 960 TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Ordering number : EN0572F 71608GA TI IM TC-00001502 / 70502TN (KT)/71598HA (KT)/3187AT/3075KI/1313KI Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer 's products or equipment. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. SANYO Semiconductors DATA SHEET 2SA1016, 1016K 2SC2362, 2362K PNP / NPN Epitaxial Planar Silicon Transistors High-Voltage Low-Noise Amp Applications |
Número de pieza similar - 2SC2362K_08 |
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