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IRF9Z14L Datasheet(Hoja de datos) 1 Page - Vishay Siliconix

No. de Pieza. IRF9Z14L
Descripción  Power MOSFET
Descarga  8 Pages
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Fabricante  VISHAY [Vishay Siliconix]
Página de inicio  http://www.vishay.com
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Document Number: 91089
www.vishay.com
S-Pending-Rev. A, 02-Jun-08
WORK-IN-PROGRESS
1
Power MOSFET
IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L
Vishay Siliconix
FEATURES
• Advanced Process Technology
• Surface Mount (IRF9Z14S/SiHF9Z14S)
• Low-ProfileThrough-Hole (IRF9Z14L/SiHF9Z14L)
• 175 °C Operating Temperature
• Fast Switching
• P-Channel
• Fully Avalanche Rated
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The D2PAK is a surface mount power package capable of
accommodating die size up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in
any existing surface mount package. The D2PAK is suitable
for high current applications because of is low internal
connection resistance and can dissipate up to 2.0 W in a
typical surface mount application.
The
through-hole
version
(IRF9Z14L/SiHF9Z14L)
is
available for low-profile applications.
Note
a. See device orientation.
PRODUCT SUMMARY
VDS (V)
- 60
RDS(on) (Ω)VGS = - 10 V
0.50
Qg (Max.) (nC)
12
Qgs (nC)
3.8
Qgd (nC)
5.1
Configuration
Single
S
G
D
P-Channel MOSFET
D2PAK (TO-263)
G
D
S
I2PAK (TO-262)
Available
RoHS*
COMPLIANT
ORDERING INFORMATION
Package
D2PAK (TO-263)
D2PAK (TO-263)
I2PAK (TO-262)
Lead (Pb)-free
IRF9Z14SPbF
IRF9Z14STRLPbFa
IRF9Z14LPbF
SiHF9Z14S-E3
SiHF9Z14STL-E3a
SiHF9Z14L-E3
SnPb
IRF9Z14S
IRF9Z14STRLa
-
SiHF9Z14S
SiHF9Z14STLa
-
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
- 60
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Currente
VGS at - 10 V
TC = 25 °C
ID
- 6.7
A
TC = 100 °C
- 4.7
Pulsed Drain Currenta, e
IDM
- 27
Linear Derating Factor
0.29
W/°C
Single Pulse Avalanche Energyb, e
EAS
140
mJ
Avalanche Currenta
IAR
- 6.7
A
Repetiitive Avalanche Energya
EAR
4.3
mJ
Maximum Power Dissipation
TC = 25 °C
PD
3.7
W
TA = 25 °C
43
* Pb containing terminations are not RoHS compliant, exemptions may apply




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