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IRF9Z24STRR Datasheet(PDF) 1 Page - Vishay Siliconix

No. de pieza IRF9Z24STRR
Descripción Electrónicos  Power MOSFET
Download  8 Pages
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Fabricante Electrónico  VISHAY [Vishay Siliconix]
Página de inicio  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

IRF9Z24STRR Datasheet(HTML) 1 Page - Vishay Siliconix

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Document Number: 91091
www.vishay.com
S-Pending-Rev. A, 03-Jun-08
WORK-IN-PROGRESS
1
Power MOSFET
IRF9Z24S, IRF9Z24L, SiHF9Z24S, SiHF9Z24L
Vishay Siliconix
FEATURES
• Advanced Process Technology
• Surface Mount (IRF9Z24S/SiHF9Z24S)
• Low-Profile Through-Hole (IRF9Z24L/SiHF9Z24L)
• 175 °C Operating Temperature
• Fast Switching
• P-Channel
• Fully Avalanche Rated
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The D2PAK is a surface mount power package capable of
accommodating die size up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in
any existing surface mount package. The D2PAK is suitable
for high current applications because of its low internal
connection resistance and can dissipate up to 2.0 W in a
typical surface mount application.
The through-hole version (IR9Z24L/SiH9Z24L) is available
for low-profile applications.
Note
a. See device orientation.
PRODUCT SUMMARY
VDS (V)
- 60
RDS(on) (Ω)VGS = - 10 V
0.28
Qg (Max.) (nC)
19
Qgs (nC)
5.4
Qgd (nC)
11
Configuration
Single
S
G
D
P-Channel MOSFET
D2PAK (TO-263)
G
D
S
I2PAK (TO-262)
Available
RoHS*
COMPLIANT
ORDERING INFORMATION
Package
D2PAK (TO-263)
D2PAK (TO-263)
D2PAK (TO-263)
I2PAK (TO-262)
Lead (Pb)-free
IRF9Z24SPbF
IRF9Z24STRLPbFa
IRF9Z24STRRPbFa
IRF9Z24LPbF
SiHF9Z24S-E3
SiHF9Z24STL-E3a
SiHF9Z24STR-E3a
SiHF9Z24L-E3
SnPb
IRF9Z24S
IRF9Z24STRLa
IRF9Z24STRRa
IRF9Z24L
SiHF9Z24S
SiHF9Z24STLa
SiHF9Z24STRa
SiHF9Z24L
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
- 60
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Currente
VGS at - 10 V
TC = 25 °C
ID
- 11
A
TC = 100 °C
- 7.7
Pulsed Drain Currenta, e
IDM
- 44
Linear Derating Factor
0.40
W/°C
Single Pulse Avalanche Energyb, e
EAS
240
mJ
Repetitive Avalanche Currenta
IAR
- 11
A
Repetitive Avalanche Energya
EAR
6.0
mJ
* Pb containing terminations are not RoHS compliant, exemptions may apply


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