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IRF9Z24STRR Datasheet(PDF) 1 Page - Vishay Siliconix |
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IRF9Z24STRR Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 8 page Document Number: 91091 www.vishay.com S-Pending-Rev. A, 03-Jun-08 WORK-IN-PROGRESS 1 Power MOSFET IRF9Z24S, IRF9Z24L, SiHF9Z24S, SiHF9Z24L Vishay Siliconix FEATURES • Advanced Process Technology • Surface Mount (IRF9Z24S/SiHF9Z24S) • Low-Profile Through-Hole (IRF9Z24L/SiHF9Z24L) • 175 °C Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated • Lead (Pb)-free Available DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IR9Z24L/SiH9Z24L) is available for low-profile applications. Note a. See device orientation. PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω)VGS = - 10 V 0.28 Qg (Max.) (nC) 19 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Single S G D P-Channel MOSFET D2PAK (TO-263) G D S I2PAK (TO-262) Available RoHS* COMPLIANT ORDERING INFORMATION Package D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263) I2PAK (TO-262) Lead (Pb)-free IRF9Z24SPbF IRF9Z24STRLPbFa IRF9Z24STRRPbFa IRF9Z24LPbF SiHF9Z24S-E3 SiHF9Z24STL-E3a SiHF9Z24STR-E3a SiHF9Z24L-E3 SnPb IRF9Z24S IRF9Z24STRLa IRF9Z24STRRa IRF9Z24L SiHF9Z24S SiHF9Z24STLa SiHF9Z24STRa SiHF9Z24L ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS - 60 V Gate-Source Voltage VGS ± 20 Continuous Drain Currente VGS at - 10 V TC = 25 °C ID - 11 A TC = 100 °C - 7.7 Pulsed Drain Currenta, e IDM - 44 Linear Derating Factor 0.40 W/°C Single Pulse Avalanche Energyb, e EAS 240 mJ Repetitive Avalanche Currenta IAR - 11 A Repetitive Avalanche Energya EAR 6.0 mJ * Pb containing terminations are not RoHS compliant, exemptions may apply |
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