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IRF634N Datasheet(PDF) 1 Page - Vishay Siliconix

No. de pieza IRF634N
Descripción Electrónicos  Power MOSFET
Download  8 Pages
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Fabricante Electrónico  VISHAY [Vishay Siliconix]
Página de inicio  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

IRF634N Datasheet(HTML) 1 Page - Vishay Siliconix

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Document Number: 91033
www.vishay.com
S-Pending-Rev. A, 19-Jun-08
WORK-IN-PROGRESS
1
Power MOSFET
IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS
Vishay Siliconix
FEATURES
• Advanced Process Technology
• Dynamic dV/dt Rating
• 175 °C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
DESCRIPTION
Fifth generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
The D2PAK (TO-263) is a surface mount power package
capable of accommodating die sizes up to HEX-4. It provides
the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D2PAK (TO-263) is suitable for high current applications
because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface mount application.
The
through-hole
version
(IRF634NL/SiHF634NL)
is
available for low-profile application.
Note
a. See device orientation.
PRODUCT SUMMARY
VDS (V)
250
RDS(on) (Ω)VGS = 10 V
0.435
Qg (Max.) (nC)
34
Qgs (nC)
6.5
Qgd (nC)
16
Configuration
Single
N-Channel MOSFET
G
D
S
D2PAK (TO-263)
G D
S
TO-220
G
D
S
I2PAK (TO-262)
Available
RoHS*
COMPLIANT
ORDERING INFORMATION
Package
TO-220
D2PAK (TO-263)
D2PAK (TO-263)
D2PAK (TO-263)
I2PAK (TO-262)
Lead (Pb)-free
IRF634NPbF
IRF634NSPbF
IRF634NSTRLPbFa
IRF634NSTRRPbFa
IRF634NLPbF
SiHF634N-E3
SiHF634NS-E3
SiHF634NSTL-E3a
SiHF634NSTR-E3a
SiHF634NL-E3
SnPb
IRF634N
IRF634NS
IRF634NSTRLa
IRF634NSTRRa
-
SiHF634N
SiHF634NS
SiHF634NSTLa
SiHF634NSTRa
-
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
250
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
VGS at 10 V
TC = 25 °C
ID
8.0
A
TC = 100 °C
5.6
Pulsed Drain Currenta
IDM
32
Linear Derating Factor
0.59
W/°C
Single Pulse Avalanche Energyb
EAS
110
mJ
Avalanche Currenta
IAR
4.8
A
Repetiitive Avalanche Energya
EAR
8.8
mJ
* Pb containing terminations are not RoHS compliant, exemptions may apply


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