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IRFP27N60KPBF Datasheet(PDF) 1 Page - Vishay Siliconix |
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IRFP27N60KPBF Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 8 page Document Number: 91219 www.vishay.com S-Pending-Rev. B, 12-Jun-08 WORK-IN-PROGRESS 1 Power MOSFET IRFP27N60K, SiHFP27N60K Vishay Siliconix FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Enhanced Body Diode dV/dt Capability • Lead (Pb)-free Available APPLICATIONS • Hard Switching Primary or PFC Switch • Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply • High Speed Power Switching • Motor Drive Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 1.4 mH, RG = 25 Ω, IAS = 27 A, dV/dt = 13 V/ns (see fig. 12). c. ISD ≤ 27 A, dI/dt ≤ 390 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. PRODUCT SUMMARY VDS (V) 600 RDS(on) (Ω)VGS = 10 V 0.18 Qg (Max.) (nC) 180 Qgs (nC) 56 Qgd (nC) 86 Configuration Single N-Channel MOSFET G D S TO-247 G D S Available RoHS* COMPLIANT ORDERING INFORMATION Package TO-247 Lead (Pb)-free IRFP27N60KPbF SiHFP27N60K-E3 SnPb IRFP27N60K SiHFP27N60K ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ± 30 Continuous Drain Current VGS at 10 V TC = 25 °C ID 27 A TC = 100 °C 18 Pulsed Drain Currenta IDM 110 Linear Derating Factor 4.0 W/°C Single Pulse Avalanche Energyb EAS 530 mJ Repetitive Avalanche Currenta IAR 27 A Repetitive Avalanche Energya EAR 50 mJ Maximum Power Dissipation TC = 25 °C PD 500 W Peak Diode Recovery dV/dtc dV/dt 13 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 300d Mounting Torque 6-32 or M3 screw 10 lbf · in 1.1 N · m * Pb containing terminations are not RoHS compliant, exemptions may apply |
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