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IRFPF40PBF Datasheet(PDF) 1 Page - Vishay Siliconix

No. de Pieza. IRFPF40PBF
Descripción  Power MOSFET
Descarga  8 Pages
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Fabricante  VISHAY [Vishay Siliconix]
Página de inicio  http://www.vishay.com
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IRFPF40PBF Datasheet(HTML) 1 Page - Vishay Siliconix

   
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Document Number: 91250
www.vishay.com
S-81377-Rev. A, 30-Jun-08
1
Power MOSFET
IRFPF40, SiHFPF40
Vishay Siliconix
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Isolated Central Mounting Hole
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
device
design,
low
on-resistance
and
cost-effectiveness.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the
earlier TO-218 package because of its isolated mouting hole.
It also provides greater creepage distance between pins to
meet the requirements of most safety specifications.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 42 mH, RG = 25 Ω, IAS = 4.7 A (see fig. 12).
c. ISD ≤ 4.7 A, dI/dt ≤ 110 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
PRODUCT SUMMARY
VDS (V)
900
RDS(on) (Ω)VGS = 10 V
2.5
Qg (Max.) (nC)
120
Qgs (nC)
16
Qgd (nC)
67
Configuration
Single
N-Channel MOSFET
G
D
S
TO-247
G
D
S
Available
RoHS*
COMPLIANT
ORDERING INFORMATION
Package
TO-247
Lead (Pb)-free
IRFPF40PbF
SiHFPF40-E3
SnPb
IRFPF40
SiHFPF40
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
900
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
VGS at 10 V
TC = 25 °C
ID
4.7
A
TC = 100 °C
2.9
Pulsed Drain Currenta
IDM
19
Linear Derating Factor
1.2
W/°C
Single Pulse Avalanche Energyb
EAS
500
mJ
Repetitive Avalanche Currenta
IAR
4.7
A
Repetitive Avalanche Energya
EAR
15
mJ
Maximum Power Dissipation
TC = 25 °C
PD
150
W
Peak Diode Recovery dV/dtc
dV/dt
1.5
V/ns
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 150
°C
Soldering Recommendations (Peak Temperature)
for 10 s
300d
Mounting Torque
6-32 or M3 screw
10
lbf · in
1.1
N · m
* Pb containing terminations are not RoHS compliant, exemptions may apply


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