SI1065X datasheet(2/6 Pages) VISHAY

No. de pieza	SI1065X

Descripción Electrónicos	P-Channel 12-V (D-S) MOSFET

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Document Number: 74320

S-80641-Rev. B, 24-Mar-08

Vishay Siliconix

Si1065X

New Product

Notes:

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = - 250 µA

- 12

V

VDS Temperature Coefficient

ΔV

DS/TJ

ID = - 250 µA

- 8.47

mV/°C

VGS(th) Temperature Coefficient

ΔV

GS(th)/TJ

2.33

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = - 250 µA

- 0.45

- 0.95

V

Gate-Source Leakage

IGSS

VDS = 0 V, VGS = ± 8 V

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = - 12 V, VGS = 0 V

- 1

nA

VDS = - 12 V, VGS = 0 V, TJ = 85 °C

- 10

µA

On-State Drain Currenta

ID(on)

VDS = ≥ 5 V, VGS = - 4.5 V

- 8

A

Drain-Source On-State Resistancea

RDS(on)

VGS = - 4.5 V, ID = - 1.18 A

0.108

0.130

Ω

VGS = - 2.5 V, ID = - 1.07 A

0.131

0.158

VGS = - 1.8 V, ID = - 0.49 A

0.158

0.204

Forward Transconductance

gfs

VDS = - 6 V, ID = - 1.18 A

5.18

S

Dynamicb

Input Capacitance

Ciss

VDS = - 6 V, VGS = 0 V, f = 1 MHz

480

pF

Output Capacitance

Coss

190

Reverse Transfer Capacitance

Crss

145

Total Gate Charge

Qg

VDS = - 6 V, VGS = - 5 V, ID = - 1.18 A

7.2

10.8

nC

VDS = - 6 V, VGS = - 4.5 V, ID = - 1.18

6.7

10.1

Gate-Source Charge

Qgs

0.84

Gate-Drain Charge

Qgd

2.7

Gate Resistance

Rg

f = 1 MHz

10

15

Ω

Turn-On Delay Time

td(on)

VDD = - 6 V, RL = 6.32 Ω

ID ≅ - 0.95 A, VGEN = - 4.5 V, Rg = 1 Ω

13

19.5

ns

Rise Time

tr

27

40.5

Turn-Off DelayTime

td(off)

45

67.5

Fall Time

tf

27

40.5

Drain-Source Body Diode Characteristics

Pulse Diode Forward Currenta

ISM

8A

Body Diode Voltage

VSD

IS = - 0.63 A

0.8

1.2

V

Body Diode Reverse Recovery Time

trr

IF = - 0.7 A, di/dt = 100 A/µs

29.2

44

nC

Body Diode Reverse Recovery Charge

Qrr

10.22

15.3

ns

Reverse Recovery Fall Time

ta

13.7

Reverse Recovery Rise Time

tb

15.5

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