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SI1067X Datasheet(PDF) 2 Page - Vishay Siliconix

No. de Pieza. SI1067X
Descripción  P-Channel 20-V (D-S) MOSFET
Descarga  6 Pages
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Fabricante  VISHAY [Vishay Siliconix]
Página de inicio  http://www.vishay.com
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SI1067X Datasheet(HTML) 2 Page - Vishay Siliconix

   
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Document Number: 74322
S-82489-Rev. C, 13-Oct-08
Vishay Siliconix
Si1067X
New Product
Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = - 250 µA
- 20
V
VDS Temperature Coefficient
ΔV
DS/TJ
ID = - 250 µA
- 32.07
mV/°C
VGS(th) Temperature Coefficient
ΔV
GS(th)/TJ
3.02
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
- 0.45
- 0.95
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 20 V, VGS = 0 V
- 1
µA
VDS = - 20 V, VGS = 0 V, TJ = 85 °C
- 10
On-State Drain Currenta
ID(on)
VDS = ≥ 5 V, VGS = - 4.5 V
- 8
A
Drain-Source On-State Resistancea
RDS(on)
VGS = - 4.5 V, ID = - 1.06 A
0.125
0.150
Ω
VGS = - 2.5 V, ID = - 1.0 A
0.138
0.166
VGS = - 1.8 V, ID = - 0.49 A
0.165
0.214
Forward Transconductance
gfs
VDS = - 10 V, ID = - 1.06 A
4.0
S
Dynamicb
Input Capacitance
Ciss
VDS = - 10 V, VGS = 0 V, f = 1 MHz
375
pF
Output Capacitance
Coss
82
Reverse Transfer Capacitance
Crss
62
Total Gate Charge
Qg
VDS = - 10 V, VGS = - 5 V, ID = - 1.06 A
6.5
9.3
nC
VDS = - 10 V, VGS = - 4.5 V, ID = - 1.06 A
6.0
9.1
Gate-Source Charge
Qgs
0.76
Gate-Drain Charge
Qgd
2.23
Gate Resistance
Rg
f = 1 MHz
8.8
13.2
Ω
Turn-On Delay Time
td(on)
VDD = - 10 V, RL = 19.74 Ω
ID ≅ - 0.76 A, VGEN = - 4.5 V, Rg = 1 Ω
14
21
ns
Rise Time
tr
22
33
Turn-Off Delay Time
td(off)
48
72
Fall Time
tf
17
25.5
Drain-Source Body Diode Characteristics
Pulse Diode Forward Currenta
ISM
8A
Body Diode Voltage
VSD
IS = - 0.63 A
0.8
1.2
V
Body Diode Reverse Recovery Time
trr
IF = - 0.7 A, dI/dt = 100 A/µs
12.8
19.2
nC
Body Diode Reverse Recovery Charge
Qrr
4.5
6.8
ns
Reverse Recovery Fall Time
ta
7.3
Reverse Recovery Rise Time
tb
5.5


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