SI1410EDH_08 datasheet(2/6 Pages) VISHAY

No. de pieza	SI1410EDH

Descripción Electrónicos	N-Channel 20-V (D-S) MOSFET

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Si1410EDH

Vishay Siliconix

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Document Number: 71409

S-03185—Rev. A, 05-Mar-01

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 mA

0.45

V

VDS = 0 V, VGS = "4.5 V

"1

mA

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "12 V

"10

mA

VDS = 16 V, VGS = 0 V

1

m

Zero Gate Voltage Drain Current

IDSS

VDS = 16 V, VGS = 0 V, TJ = 85_C

5

mA

On-State Drain Currenta

ID(on)

VDS = 5 V, VGS = 4.5 V

4

A

VGS = 4.5 V, ID = 3.7 A

0.055

0.070

Drain-Source On-State Resistancea

rDS(on)

VGS = 2.5 V, ID = 3.4 A

0.065

0.080

W

DS(on)

VGS = 1.8 V, ID = 1.7 A

0.080

0.100

Forward Transconductancea

gfs

VDS = 10 V, ID = 3.7 A

10

S

Diode Forward Voltagea

VSD

IS = 1.4 A, VGS = 0 V

0.75

1.1

V

Dynamicb

Total Gate Charge

Qg

5.6

8

Gate-Source Charge

Qgs

VDS = 10 V, VGS = 4.5 V, ID = 3.7 A

0.75

nC

Gate-Drain Charge

Qgd

1.10

Turn-On Delay Time

td(on)

0.15

0.25

Rise Time

tr

VDD = 10 V, RL = 10 W

0.4

0.6

m

Turn-Off Delay Time

td(off)

VDD = 10 V, RL = 10 W

ID ^ 1 A, VGEN = 4.5 V, RG = 6 W

1.9

2.8

ms

Fall Time

tf

1.2

1.8

Notes

a.

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

b.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0.01

100

10,000

Gate Current vs. Gate-Source Voltage

0

2

4

6

8

10

0

3

6

9

12

15

18

Gate-Current vs. Gate-Source Voltage

VGS – Gate-to-Source Voltage (V)

0.1

1

10

1,000

VGS – Gate-to-Source Voltage (V)

0

36

9

12

TJ = 25_C

TJ = 150_C

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