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SI1411DH Datasheet(PDF) 2 Page - Vishay Siliconix

No. de pieza SI1411DH
Descripción Electrónicos  P-Channel 150-V (D-S) MOSFET
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Fabricante Electrónico  VISHAY [Vishay Siliconix]
Página de inicio  http://www.vishay.com
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SI1411DH Datasheet(HTML) 2 Page - Vishay Siliconix

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Si1411DH
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 73242
S-50461—Rev. B, 14-Mar-05
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = −100 mA
−2.5
−4.5
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "20 V
"100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = −150 V, VGS = 0 V
−1
mA
Zero Gate Voltage Drain Current
IDSS
VDS = −150 V, VGS = 0 V, TJ = 85_C
−5
mA
On-State Drain Currenta
ID(on)
VDS = −15 V, VGS = −10 V
−0.8
A
Drain Source On State Resistancea
rDS( )
VGS = −10 V, ID = −0.5 A
2.05
2.6
W
Drain-Source On-State Resistancea
rDS(on)
VGS = −6 V, ID = −0.5 A
2.14
2.7
W
Forward Transconductancea
gfs
VDS = −10 V, ID = −0.5 A
1.5
S
Diode Forward Voltagea
VSD
IS = −1.4 A, VGS = 0 V
−0.80
−1.1
V
Dynamicb
Total Gate Charge
Qg
4.2
6.3
Gate-Source Charge
Qgs
VDS = −75 V, VGS = −10 V, ID = −0.5 A
0.9
nC
Gate-Drain Charge
Qgd
DS
, GS
, D
1.3
Gate Resistance
Rg
f = 1.0 MHz
8.5
W
Turn-On Delay Time
td(on)
4.5
7
Rise Time
tr
VDD = −75 V, RL = 75 W
11
17
Turn-Off Delay Time
td(off)
VDD = −75 V, RL = 75 W
ID ^ −1 A, VGEN = −4.5 V, Rg = 6 W
9
14
ns
Fall Time
tf
g
11
17
ns
Reverse Recovery Time
trr
IF = 0 5 A di/dt = 100 A/ms
36
55
Body Diode Reverse Recovery Charge
Qrr
IF = −0.5 A, di/dt = 100 A/ms
65
100
nC
Notes
a.
Pulse test; pulse width v 300 ms, duty cycle v 2%.
b.
Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0
1234
5
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0
2468
10
VGS = 10 thru 5 V
25_C
TC = 125_C
−55_C
3 V
Output Characteristics
Transfer Characteristics
VDS − Drain-to-Source Voltage (V)
VGS − Gate-to-Source Voltage (V)
4 V


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