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SI1912EDH Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI1912EDH Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 6 page Si1912EDH Vishay Siliconix New Product www.vishay.com 2 Document Number: 71408 S-03176—Rev. A, 05-Mar-01 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 100 mA 0.45 V VDS = 0 V, VGS = "4.5 V "1 mA Gate-Body Leakage IGSS VDS = 0 V, VGS = "12 V "10 mA VDS = 16 V, VGS = 0 V 1 m Zero Gate Voltage Drain Current IDSS VDS = 16 V, VGS = 0 V, TJ = 85_C 5 mA On-State Drain Currenta ID(on) VDS = 5 V, VGS = 4.5 V 2 A VGS = 4.5 V, ID = 1.13 A 0.220 0.280 Drain-Source On-State Resistancea rDS(on) VGS = 2.5 V, ID = 0.99 A 0.281 0.360 W DS(on) VGS = 1.8 V, ID = 0.2 A 0.344 0.450 Forward Transconductancea gfs VDS = 10 V, ID = 1.13 A 2.6 S Diode Forward Voltagea VSD IS = 0.48 A, VGS = 0 V 0.80 1.2 V Dynamicb Total Gate Charge Qg 0.65 1.0 Gate-Source Charge Qgs VDS = 10 V, VGS = 4.5 V, ID = 1.13 A 0.2 nC Gate-Drain Charge Qgd 0.23 Turn-On Delay Time td(on) 45 70 Rise Time tr VDD = 10 V, RL = 20 W 85 130 Turn-Off Delay Time td(off) VDD = 10 V, RL = 20 W ID ^ 0.5 A, VGEN = 4.5 V, RG = 6 W 350 530 ns Fall Time tf 210 320 Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.001 100 10,000 Gate Current vs. Gate-Source Voltage 0 2 4 6 8 10 0 4 8 12 16 Gate-Current vs. Gate-Source Voltage VGS – Gate-to-Source Voltage (V) 0.1 1 10 1,000 VGS – Gate-to-Source Voltage (V) 0 3 9 12 15 TJ = 25_C TJ = 150_C 0.01 6 |
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Descripción similar - SI1912EDH_08 |
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