SI2305ADS datasheet(3/7 Pages) VISHAY

No. de pieza	SI2305ADS

Descripción Electrónicos	P-Channel 8-V (D-S) MOSFET

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Fabricante Electrónico	VISHAY [Vishay Siliconix]

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Document Number: 69940

S-82713-Rev. C, 10-Nov-08

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Vishay Siliconix

Si2305ADS

New Product

TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

0

3

6

9

12

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

VDS - Drain-to-Source Voltage (V)

VGS = 4.5 thru 2 V

VGS =1.5 V

VGS =1 V

VGS =0.5 V

0.02

0.04

0.06

0.08

0.10

0

246

8

10

ID - Drain Current (A)

VGS =2.5 V

VGS =4.5 V

VGS =1.8V

0.0

0.9

1.8

2.7

3.6

4.5

0.0

1.5

3.0

4.5

6.0

7.5

9.0

ID =4.1 A

Qg - Total Gate Charge (nC)

VDS =4 V

VDS =6.4 V

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

3

6

9

12

0.0

0.5

1.0

1.5

2.0

VGS - Gate-to-Source Voltage (V)

TC = 125 °C

TC =25 °C

TC = - 55 °C

Crss

0

300

600

900

1200

024

6

8

Coss

Ciss

VDS - Drain-to-Source Voltage (V)

0.7

0.9

1.1

1.3

1.5

- 50

- 25

0

25

50

75

100

125

150

TJ -Junction Temperature (°C)

VDS =4.5 V,ID =4.1 A

VDS =2.5 V,ID =3.4 A

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