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SI2306BDS Datasheet(PDF) 3 Page - Vishay Siliconix |
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SI2306BDS Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 5 page Document Number: 73234 S-80642-Rev. B, 24-Mar-08 www.vishay.com 3 Vishay Siliconix Si2306BDS TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted On-Resistance vs. Drain Current Gate Charge Source-Drain Diode Forward Voltage 0.00 0.02 0.04 0.06 0.08 0.10 0 2 4 6 8 10 12 14 16 ID - Drain Current (A) VGS = 4.5 V VGS = 10 V 0 2 4 6 8 10 0 123 456 VDS = 15 V ID = 3.5 A Qg - Total Gate Charge (nC) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 TJ = 150 °C TJ = 25 °C 10 0.1 VSD - Source-to-Drain Voltage (V) 1 Capacitance On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage 0 50 100 150 200 250 300 350 400 0 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) Crss Coss Ciss 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 VGS = 10 V ID = 3.5 A TJ - Junction Temperature (°C) 0.0 0.1 0.2 0.3 0.4 0.5 0 2468 10 ID = 3.5 A VGS - Gate-to-Source Voltage (V) |
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