SI2323DS datasheet(4/6 Pages) VISHAY

No. de pieza	SI2323DS

Descripción Electrónicos	P-Channel 20-V (D-S) MOSFET

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Document Number: 72024

S-81954-Rev. C, 25-Aug-08

Vishay Siliconix

Si2323DS

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

1.0

1.2

0.1

10

20

0.0

0.2

0.4

0.6

0.8

TJ = 150 °C

VSD - Source-to-Drain Voltage (V)

1

TJ = 25 °C

- 0.2

- 0.1

0.0

0.1

0.2

0.3

0.4

- 50

- 25

0

25

50

75

100

125

150

ID = 140 µA

TJ - Temperature (°C)

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power

0.00

0.03

0.06

0.09

0.12

0.15

012345

ID = 4.7 A

VGS - Gate-to-Source Voltage (V)

ID = 2 A

0.01

0

1

6

12

2

4

10

600

0.1

Time (s)

8

10

100

TA = 25 °C

Safe Operating Area

100

1

0.1

1

10

100

0.01

10

TA = 25 °C

Single Pulse

P(t) = 10

DC

0.1

ID(on)

Limited

RDS(on)*

Limited by

BVDSS Limited

P(t) = 1

P(t) = 0.1

P(t) = 0.01

P(t) = 0.001

P(t) = 0.0001

IDM Limited

VDS - Drain-to-Source Voltage (V)

*VGS > minimum VGS at which RDS(on) is specified

Número de pieza similar - SI2323DS

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Vishay Siliconix	SI2323DS	42Kb / 5P	P-Channel 20-V (D-S) MOSFET Rev. B, 25-Nov-02
Texas Instruments	Si2323DS	1Mb / 29P	[Old version datasheet] Triple-Supply Power Management IC for Powering FPGAs and DSPs
Guangdong Kexin Industr...	SI2323DS	1Mb / 5P	P-Channel Enhancement MOSFET
Vishay Siliconix	SI2323DS	201Kb / 9P	P-Channel 20-V (D-S) MOSFET Rev. D, 02-Feb-09
Vishay Siliconix	SI2323DS	164Kb / 8P	P-Channel 20-V (D-S) MOSFET 01-Jan-2022

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Descripción similar - SI2323DS

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