SI3458BDV datasheet(3/7 Pages) VISHAY

No. de pieza	SI3458BDV

Descripción Electrónicos	N-Channel 60-V (D-S) MOSFET

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Fabricante Electrónico	VISHAY [Vishay Siliconix]

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Document Number: 69501

S-72520-Rev. A, 03-Dec-07

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Vishay Siliconix

Si3458BDV

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

0

2

4

6

8

10

0

0.4

0.8

1.2

1.6

2.0

VDS - Drain-to-Source Voltage (V)

VGS = 10 thru 4 V

VGS = 3 V

0.03

0.06

0.09

0.12

0.15

0

2468

10

ID - Drain Current (A)

VGS = 4.5 V

VGS = 10 V

0

2

4

6

8

10

0

246

8

Qg - Total Gate Charge (nC)

VDS = 48 V

VDS = 30 V

ID = 3.2 A

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

VGS - Gate-to-Source Voltage (V)

0

0.4

0.8

1.2

1.6

2.0

0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

TC = 125 °C

TC = 25 °C

TC = - 55 °C

Crss

VDS - Drain-to-Source Voltage (V)

0

100

200

300

400

500

0

102030405060

Coss

Ciss

TJ - Junction Temperature (°C)

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

- 50

- 25

0

25

50

75

100

125

150

ID = 3.2 A

VGS = 10 V

VGS = 4.5 V

Número de pieza similar - SI3458BDV

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Vishay Siliconix	SI3458BDV	215Kb / 11P	N-Channel 60-V (D-S) MOSFET Rev. B, 20-Apr-09
	Si3458BDV	221Kb / 11P	N-Channel 60-V (D-S) MOSFET Rev. B, 20-Apr-09
	SI3458BDV-T1-GE3	216Kb / 11P	N-Channel 60-V (D-S) MOSFET Rev. B, 20-Apr-09
VBsemi Electronics Co.,...	SI3458BDV-T1-GE3	399Kb / 7P	N-Channel 60 V (D-S) MOSFET
Vishay Siliconix	SI3458BDV	215Kb / 11P	N-Channel 60-V (D-S) MOSFET Rev. B, 20-Apr-09

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Descripción similar - SI3458BDV

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