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SI3475DV Datasheet(PDF) 2 Page - Vishay Siliconix

No. de pieza SI3475DV
Descripción Electrónicos  P-Channel 200-V (D-S) MOSFET
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Fabricante Electrónico  VISHAY [Vishay Siliconix]
Página de inicio  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI3475DV Datasheet(HTML) 2 Page - Vishay Siliconix

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Document Number: 74249
S-62239–Rev. A, 06-Nov-06
Vishay Siliconix
Si3475DV
Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = - 250 µA
- 200
V
VDS Temperature Coefficient
ΔV
DS/TJ
ID = - 250 µA
- 240
mV/°C
VGS(th) Temperature Coefficient
ΔV
GS(th)/TJ
6.2
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
- 2
- 4
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 200 V, VGS = 0 V
- 1
µA
VDS = - 200 V, VGS = 0 V, TJ = 55 °C
- 10
On-State Drain Currenta
ID(on)
VDS ≥ - 10 V, VGS = - 10 V
- 2
A
Drain-Source On-State Resistancea
rDS(on)
VGS = - 10 V, ID = - 0.9 A
1.34
1.61
Ω
VGS = - 6 V, ID = - 0.7 A
1.37
1.65
Forward Transconductancea
gfs
VDS = - 10 V, ID = - 0.9 A
3.5
S
Dynamicb
Input Capacitance
Ciss
VDS = - 50 V, VGS = 0 V, f = 1 MHz
500
pF
Output Capacitance
Coss
26
Reverse Transfer Capacitance
Crss
18
Total Gate Charge
Qg
VDS = - 100 V, VGS = - 10 V, ID = - 1 A
11.7
18
nC
VDS = - 100 V, VGS = - 6 V, ID = - 1 A
7.8
12
Gate-Source Charge
Qgs
2
Gate-Drain Charge
Qgd
3.7
Gate Resistance
Rg
f = 1 MHz
9
14
Ω
Turn-On Delay Time
td(on)
VDD = - 100 V, RL = 100 Ω
ID ≅ - 1 A, VGEN = - 10 V, Rg = 1 Ω
914
ns
Rise Time
tr
11
18
Turn-Off DelayTime
td(off)
28
42
Fall Time
tf
12
18
Turn-On Delay Time
td(on)
VDD = - 100 V, RL = 100 Ω
ID ≅ - 1 A, VGEN = - 6 V, Rg = 1 Ω
14
21
Rise Time
tr
29
44
Turn-Off DelayTime
td(off)
23
35
Fall Time
tf
14
21
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current
IS
TC = 25 °C
- 0.95
A
Pulse Diode Forward Current
ISM
- 3
Body Diode Voltage
VSD
IS = - 1 A, VGS = 0 V
- 0.81
- 1.2
V
Body Diode Reverse Recovery Time
trr
IF = - 1.2 A, di/dt = 100 A/µs, TJ = 25 °C
84
130
ns
Body Diode Reverse Recovery Charge
Qrr
235
350
nC
Reverse Recovery Fall Time
ta
46
ns
Reverse Recovery Rise Time
tb
38


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