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SI3867DV Datasheet(PDF) 2 Page - Vishay Siliconix

No. de pieza SI3867DV
Descripción Electrónicos  P-Channel 20-V (D-S) MOSFET
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Fabricante Electrónico  VISHAY [Vishay Siliconix]
Página de inicio  http://www.vishay.com
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SI3867DV Datasheet(HTML) 2 Page - Vishay Siliconix

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Document Number: 72068
S-60422-Rev. C, 20-Mar-06
Vishay Siliconix
Si3867DV
Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
25 °C unless noted
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
- 0.6
- 1.4
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 12 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 20 V, VGS = 0 V
- 1
µA
VDS = - 20 V, VGS = 0 V, TJ = 85 °C
- 5
On-State Drain Currenta
ID(on)
VDS = - 5 V, VGS = - 4.5 V
- 20
A
Drain-Source On-State Resistancea
rDS(on)
VGS = - 4.5 V, ID = - 5.1 A
0.041
0.051
Ω
VGS = - 3.3 V, ID = - 4.5 A
0.054
0.067
VGS = - 2.5 V, ID = - 2 A
0.081
0.100
Forward Transconductancea
gfs
VDS = - 5 V, ID = - 5.1 A
11
S
Diode Forward Voltagea
VSD
IS = - 1.7 A, VGS = 0 V
- 0.7
- 1.2
V
Dynamicb
Total Gate Charge
Qg
VDS = - 10 V, VGS = - 4.5 V, ID = - 5.1 A
711
nC
Gate-Source Charge
Qgs
2.3
Gate-Drain Charge
Qgd
1.6
Turn-On Delay Time
td(on)
VDD = - 10 V, RL = 10 Ω
ID ≅ - 1 A, VGEN = - 4.5 V, RG = 6 Ω
17
30
ns
Rise Time
tr
31
50
Turn-Off Delay Time
td(off)
32
50
Fall Time
tf
30
50
Source-Drain Reverse Recovery Time
trr
IF = - 1.7 A, di/dt = 100 A/µs
25
50
Output Characteristics
0
4
8
12
16
20
0
1234
5
VGS = 5 thru 3.5 V
2.5 V
VDS - Drain-to-Source Voltage (V)
1.5 V
2 V
3 V
Transfer Characteristics
0
4
8
12
16
20
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
TC = - 55 °C
125 °C
25 °C
VGS - Gate-to-Source Voltage (V)


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