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SI5511DC Datasheet(PDF) 1 Page - Vishay Siliconix

No. de pieza SI5511DC
Descripción Electrónicos  N- and P-Channel 30-V (D-S) MOSFET
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Fabricante Electrónico  VISHAY [Vishay Siliconix]
Página de inicio  http://www.vishay.com
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SI5511DC Datasheet(HTML) 1 Page - Vishay Siliconix

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Vishay Siliconix
Si5511DC
Document Number: 73787
S-72204-Rev. B, 22-Oct-07
www.vishay.com
1
N- and P-Channel 30-V (D-S) MOSFET
FEATURES
TrenchFET® Power MOSFETs
APPLICATIONS
Buck-Boost
- DSC
- Portable Devices
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
ID (A)
Qg (Typ)
N-Channel
30
0.055 at VGS = 4.5 V
4a,g
4.2 nC
0.090 at VGS = 2.5 V
4a,g
P-Channel
- 30
0.150 at VGS = - 4.5 V
- 3.6a
2.85 nC
0.256 at VGS = - 2.5 V
- 2.7a
Ordering Information: Si5511DC-T1-E3 (Lead (Pb)-free)
Marking Code
EE
XXX
Lot Traceability
and Date Code
Part # Code
Bottom View
S1
G1
S2
G2
D1
D1
D2
D2
1
1206-8 Chip-FET ®
N-Channel MOSFET
D1
G1
S1
S2
G2
D2
P-Channel MOSFET
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 Board.
c. t = 5 s
d. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result
of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequade
bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 110 °C/W for N-Channel and 130 °C/W for P-Channel.
g. Package limited.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Unit
Drain-Source Voltage
VDS
30
- 30
V
Gate-Source Voltage
VGS
± 12
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
ID
4a, g
- 3.6a
A
TC = 70 °C
4a, g
- 2.8a
TA = 25 °C
4a, g
- 2.3b, c
TA = 70 °C
3.9a
- 1.8b, c
Pulsed Drain Current
IDM
15
- 10
Source Drain Current Diode Current
TC = 25 °C
IS
2.6
- 2.6
TA = 25 °C
1.7b, c
- 1.7b, c
Maximum Power Dissipation
TC = 25 °C
PD
3.1
2.6
W
TC = 70 °C
2.0
1.7
TA = 25 °C
2.1b, c
1.3b, c
TA = 70 °C
1.33b, c
0.84b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)d, e
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
N-Channel
P-Channel
Unit
Typ
Max
Typ
Max
Maximum Junction-to-Ambientb, f
t
≤ 5 s
RthJA
50
60
77
95
°C/W
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
30
40
33
40
RoHS
COMPLIANT


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