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FCSP0530ETR Datasheet(PDF) 2 Page - Vishay Siliconix |
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FCSP0530ETR Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 5 page www.vishay.com For technical questions, contact: diodes-tech@vishay.com Document Number: 93429 2 Revision: 26-Aug-08 FCSP0530ETR Vishay High Power Products FlipKY®, 0.5 A Note (1) Pulse width < 300 µs, duty cycle < 2 % Notes (1) thermal runaway condition for a diode on its own heatsink (2) Mounted on dual sided 0.58" square FR4 PCB with 0.2 square inches of 1 oz. top copper area ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current IF(AV) 50 % duty cycle at TPCB = 133 °C, rectangular waveform 0.5 A Maximum peak one cycle non-repetitive surge current at TJ = 25 °C IFSM 5 µs sine or 3 µs rect. pulse Following any rated load condition and with rated VRRM applied 190 10 ms sine or 6 ms rect. pulse 10 Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 2.0 A, L = 5.0 mH 5 mJ Repetitive avalanche current IAR Current decaying linearly to zero in 1 µs Frequency limited by TJ maximum VA = 1.5 x VR typical 0.5 A ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS Maximum forward voltage drop See fig. 1 VFM (1) 0.5 A TJ = 25 °C 0.40 0.44 V 1 A 0.45 0.49 0.5 A TJ = 125 °C 0.29 0.33 1 A 0.36 0.39 Maximum reverse leakage current See fig. 2 IRM (1) TJ = 25 °C VR = Rated VR 10 50 µA TJ = 125 °C 5 15 mA Maximum junction capacitance CT VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C - 90 pF Maximum voltage rate of charge dV/dt Rated VR - 10 000 V/µs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage temperature range TJ (1), TStg - 55 to 150 °C Typical thermal resistance, junction to PCB RthJL (2) DC operation 35 °C/W Typical thermal resistance, junction to ambient RthJA (2) 150 dP tot dT J ------------- 1 R thJA -------------- < |
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