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SI5857DU-T1-GE3 Datasheet(PDF) 7 Page - Vishay Siliconix |
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SI5857DU-T1-GE3 Datasheet(HTML) 7 Page - Vishay Siliconix |
7 / 10 page Document Number: 73696 S-81449-Rev. C, 23-Jun-08 www.vishay.com 7 Vishay Siliconix Si5857DU MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (s) 10-3 10-2 0 0 0 1 0 1 1 10-1 10-4 100 0.2 0.1 0.05 0.02 1 0.1 0.01 Single Pulse t1 t2 Notes: PDM 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 87 °C/W 3. TJM - TA = PDMZthJA(t) t1 t2 4. Surface Mounted Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Case Square Wave Pulse Duration (s) Duty Cycle = 0.5 1 0.01 1 Single Pulse 0.02 0.05 0.1 0.2 10-3 10-2 10-1 10-4 |
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