BAS16D-V datasheet(2/6 Pages) VISHAY

No. de pieza	BAS16D-V

Descripción Electrónicos	Small Signal Fast Switching Diode

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Fabricante Electrónico	VISHAY [Vishay Siliconix]

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Document Number 85723

Rev. 1.2, 06-Apr-05

BAS16D-V

Vishay Semiconductors

Thermal Characteristics

Tamb = 25 °C, unless otherwise specified

1) Valid provided electrodes are kept at ambient temperature

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified

1) Valid provided electrodes are kept at ambient temperature

Typical Characteristics (Tamb = 25

°C unless otherwise specified)

Parameter

Test condition

Symbol

Value

Unit

Maximum junction temperature

Tj

150

°C

Storage temperature

TS

- 65 to 1501)

°C

Parameter

Test condition

Symbol

Min

Typ.

Max

Unit

Forward voltage

IF = 1 mA

VF

715

mV

IF = 10 mA

VF

855

mV

IF = 50 mA

VF

1.00

V

IF = 150 mA

VF

1.25

V

Leakage current

VR = 25 V, TJ = 150 °C

IR

30

µA

VR = 75 V

IR

1

µA

VR = 75 V, TJ = 150 °C

IR

50

µA

Diode capacitance

VR = 0; f = 1 MHz

Ctot

2pF

Reverse recovery time

IF = 10 mA to IR = 10 mA,

IR = 1 mA, RL = 100 Ω

trr

6ns

Thermal resistance junction to

ambient air

RthJA

3751)

°C/W

Figure 1. Forward characteristics

18105

Figure 2. Dynamic Forward Resistance vs. Forward Current

17438

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