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BCR Datasheet(PDF) 1 Page - Vishay Siliconix |
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BCR Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 3 page www.vishay.com For technical questions, contact: efi@vishay.com Document Number: 61023 54 Revision: 12-Mar-08 BCR Vishay Electro-Films Thin Film, Back-Contact Resistor The Back Contact Resistor (BCR) series single-value back-contact resistor chip is one of the smallest chips available. The BCR requires only one wire bond thus saving hybrid space. The BCRs are manufactured using Vishay Electro-Films (EFI) sophisticated thin film equipment and manufacturing technology. The BCRs are 100 % electrically tested and visually inspected to MIL-STD-883. FEATURES • Wire bondable • Only one wire bond required • Small size: 0.020 inches square. • Resistance range: 10 Ω to 1 MΩ • Oxidized silicon substrate for good power dissipation • Resistor material: Tantalum nitride, self-passivating • Moisture resistant APPLICATIONS Vishay EFI BCR resistor chips are widely used in hybrid packages where space is limited. The bottom connection is made by attaching the back of the chip to the substrate either eutectically or with conductive epoxy. The single wire bond is made to the notched pad on the top of the chip. (The other rectangular pad on the top of the chip is a via hole, a low-ohmic contact connecting the resistor to the bottom of the chip.) Product may not be to scale TEMPERATURE COEFFICIENT OF RESISTANCE, VALUES AND TOLERANCES PROCESS CODE CLASS H* CLASS K* 010 056 002 061 027 059 008 052 *MIL-PRF-38534 inspection criteria 0.1 % Tightest Standard Tolerance Available ± 250 ppm/°C ± 50 ppm/°C ± 100 ppm/°C 0.2 % 1 M Ω 100 Ω 10 Ω 200 k Ω ± 25 ppm/°C 20 Ω 50 Ω 200 Ω 1 kΩ 360 k Ω 620 k Ω 0.5 % 1 % 2 % 5 % STANDARD ELECTRICAL SPECIFICATIONS PARAMETER Noise, MIL-STD-202, Method 308 100 Ω - 250 kΩ < 100 Ω or > 251 kΩ - 35 dB typ. - 20 dB typ. Moisture resistance, MIL-STD-202 Method 106 ± 0.5 % max. ΔR/R Stability, 1000 h, + 125 °C, 125 mW ± 1.0 % max. ΔR/R Operating Temperature Range - 55 °C to + 125 °C Thermal Shock, MIL-STD-202, Method 107, Test Condition F ± 0.25 % max. ΔR/R High Temperature Exposure, + 150 °C, 100 h ± 0.5 % max. ΔR/R Dielectric Voltage Breakdown 200 V Insulation Resistance 1012 min. Operating Voltage 75 V max. DC Power Rating at + 70 °C (Derated to Zero at + 175 °C) 250 mW 5 x Rated Power Short-Time Overload, + 25 °C, 5 s ± 0.25 % max. ΔR/R |
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