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BCR Datasheet(PDF) 1 Page - Vishay Siliconix

No. de pieza BCR
Descripción Electrónicos  Thin Film, Back-Contact Resistor
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Fabricante Electrónico  VISHAY [Vishay Siliconix]
Página de inicio  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

BCR Datasheet(HTML) 1 Page - Vishay Siliconix

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www.vishay.com
For technical questions, contact: efi@vishay.com
Document Number: 61023
54
Revision: 12-Mar-08
BCR
Vishay Electro-Films
Thin Film, Back-Contact Resistor
The
Back
Contact
Resistor
(BCR)
series
single-value
back-contact resistor chip is one of the smallest chips available.
The BCR requires only one wire bond thus saving hybrid space.
The BCRs are manufactured using Vishay Electro-Films
(EFI) sophisticated thin film equipment and manufacturing
technology. The BCRs are 100 % electrically tested and
visually inspected to MIL-STD-883.
FEATURES
• Wire bondable
• Only one wire bond required
• Small size: 0.020 inches square.
• Resistance range: 10 Ω to 1 MΩ
• Oxidized silicon substrate for good power dissipation
• Resistor material: Tantalum nitride, self-passivating
• Moisture resistant
APPLICATIONS
Vishay EFI BCR resistor chips are widely used in hybrid packages where space is limited. The bottom connection is made by
attaching the back of the chip to the substrate either eutectically or with conductive epoxy. The single wire bond is made to the
notched pad on the top of the chip. (The other rectangular pad on the top of the chip is a via hole, a low-ohmic contact connecting
the resistor to the bottom of the chip.)
Product may not
be to scale
TEMPERATURE COEFFICIENT OF RESISTANCE, VALUES AND TOLERANCES
PROCESS CODE
CLASS H*
CLASS K*
010
056
002
061
027
059
008
052
*MIL-PRF-38534 inspection criteria
0.1 %
Tightest Standard Tolerance Available
± 250 ppm/°C
± 50 ppm/°C
± 100 ppm/°C
0.2 %
1 M
Ω
100
Ω
10
Ω
200 k
Ω
± 25 ppm/°C
20
Ω 50 Ω
200
Ω 1 kΩ
360 k
Ω
620 k
Ω
0.5 %
1 %
2 %
5 %
STANDARD ELECTRICAL SPECIFICATIONS
PARAMETER
Noise, MIL-STD-202, Method 308
100
Ω - 250 kΩ
< 100
Ω or > 251 kΩ
- 35 dB typ.
- 20 dB typ.
Moisture resistance, MIL-STD-202
Method 106
± 0.5 % max.
ΔR/R
Stability, 1000 h, + 125 °C, 125 mW
± 1.0 % max.
ΔR/R
Operating Temperature Range
- 55 °C to + 125 °C
Thermal Shock, MIL-STD-202,
Method 107, Test Condition F
± 0.25 % max.
ΔR/R
High Temperature Exposure, + 150 °C, 100 h
± 0.5 % max.
ΔR/R
Dielectric Voltage Breakdown
200 V
Insulation Resistance
1012 min.
Operating Voltage
75 V max.
DC Power Rating at + 70 °C (Derated to Zero at + 175 °C)
250 mW
5 x Rated Power Short-Time Overload, + 25 °C, 5 s
± 0.25 % max.
ΔR/R


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