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TP0101K Datasheet(PDF) 1 Page - Vishay Siliconix

No. de pieza TP0101K
Descripción Electrónicos  P-Channel 20-V (D-S) MOSFET, Low-Threshold
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Fabricante Electrónico  VISHAY [Vishay Siliconix]
Página de inicio  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

TP0101K Datasheet(HTML) 1 Page - Vishay Siliconix

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FEATURES
D TrenchFETr Power MOSFET
D ESD Protected: 3000 V
APPLICATIONS
D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories
D Battery Operated Systems, DC/DC Converters
D Power Supply Converter Circuits
D Load/Power Switching−Cell Phones, Pagers
TP0101K
Vishay Siliconix
New Product
Document Number: 72692
S-40248—Rev. A, 16-Feb-04
www.vishay.com
1
P-Channel 20-V (D-S) MOSFET, Low-Threshold
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
20
0.65 @ VGS = −4.5 V
−0.58
−20
0.85 @ VGS = −2.5 V
−0.5
G
S
D
Top View
2
3
TO-236
(SOT-23)
1
Ordering Information: TP0101K-T1—E3 (Lead Free)
Marking Code: K4ywl
K4 = Part Number Code for TP0101K
y = Year Code
w = Week Code
l = Lot Traceability
D
S
G
100 W
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
VDS
−20
V
Gate-Source Voltage
VGS
"8
V
Continuous Drain Current (TJ = 150_C)b
TA= 25_C
ID
−0.58
Continuous Drain Current (TJ = 150_C)b
TA= 70_C
ID
−0.46
A
Pulsed Drain Currenta
IDM
−2
A
Continuous Source Current (Diode Conduction)b
IS
−0.3
Power Dissipationb
TA= 25_C
PD
0.35
W
Power Dissipationb
TA= 70_C
PD
0.22
W
Operating Junction and Storage Temperature Range
TJ, Tstg
−55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limits
Unit
Thermal Resistance, Junction-to-Ambientb
RthJA
357
_C/W
Notes
a.
Pulse width limited by maximum junction temperature.
b.
Surface Mounted on FR4 Board, t v 10 sec.


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