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MIC Datasheet(PDF) 1 Page - Vishay Siliconix

No. de pieza MIC
Descripción Electrónicos  Thin Film Microwave Resistor
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Fabricante Electrónico  VISHAY [Vishay Siliconix]
Página de inicio  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

MIC Datasheet(HTML) 1 Page - Vishay Siliconix

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For technical questions, contact: efi@vishay.com
Document Number: 61037
92
Revision: 14-Mar-08
MIC
Vishay Electro-Films
Thin Film Microwave Resistor
The MIC resistor chips on alumina are designed with low
shunt capacitance. Most lower value resistor geometrics are
compatible with strip lines, making them ideally suited for
microwave circuits.
These chips are manufactured using Vishay Electro-Films
(EFI) sophisticated Thin Film equipment and manufacturing
technology. The MICs are 100 % electrically tested and
visually inspected to MIL-STD-883.
FEATURES
• Wire bondable
• Small chip size: 0.020 x 0.040 inches
• Microwave resistance range: 20 Ω - 1 kΩ
• Overall resistance range: 2 Ω to 20 kΩ
• Alumina substrate
• Low stray capacitance: < 0.2 pF
• Resistor material: Tantalum nitride, self passivating
• Moisture resistant
• High frequency
APPLICATIONS
Vishay EFI MIC chip resistors provide excellent high-frequency response and are ideally suited for prototyping.
Typical application areas are:
• Amplifiers
• Oscillators
• Attenuators
• Couplers
• Filters
Note
• Only 20 W to 1 kW are standard strip line designs for microwave applications
Product may not
be to scale
TEMPERATURE COEFFICIENT OF RESISTANCE, VALUES AND TOLERANCES
PROCESS CODE
MICROWAVE
CLASS H*
CLASS K*
CLASS H*
CLASS K*
004
034
-
-
002
032
-
-
001
031
014
-
003
033
016
017
Gold termination
*MIL-PRF-38534 inspection criteria
2
Ω
1.0 %
Tightest Standard Tolerance Available
± 100 ppm/°C
± 50 ppm/°C
10
Ω
20
Ω
10 k
Ω
15 k
Ω 20 kΩ
± 25 ppm/°C
± 200 ppm/°C
STANDARD ELECTRICAL SPECIFICATIONS
PARAMETER
Noise, MIL-STD-202, Method 308
- 20 dB typ.
Moisture Resistance, MIL-STD-202, Method 106
± 0.1 % max.
ΔR/R
Stability, 1000 h, + 125 °C, 62 mW
± 0.2 % max.
ΔR/R
Operating Temperature Range
- 55 °C to + 125 °C
Thermal Shock, MIL-STD-202, Method 107, Test Condition F
± 0.1 % max.
ΔR/R
High Temperature Exposure, + 150 °C, 1000 h
± 0.2 % max.
ΔR/R
Dielectric Voltage Breakdown
400 V
Insulation Resistance
1012 min.
Operating Voltage
100 V max.
DC Power Rating at + 70 °C (Derated to Zero at 150 °C)
125 mW max.
5 x Rated Power Short-Time Overload, + 25 °C, 5 s
± 0.1 % max.
ΔR/R


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