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U10BCT Datasheet(PDF) 1 Page - Vishay Siliconix |
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U10BCT Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 5 page New Product U(F,B)10BCT thru U(F,B)10DCT Vishay General Semiconductor Document Number: 88967 Revision: 13-May-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 Dual Common-Cathode Ultrafast Rectifier FEATURES • Oxide planar chip junction • Ultrafast recovery time • Soft recovery characteristics • Low switching losses, high efficiency • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB, IT-220AB) • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in low voltage, high frequency rectifier of switching power supplies, freewheeling diodes, dc-to-dc converters or polarity protection application. MECHANICAL DATA Case: TO-220AB, ITO-220AB and TO-263AB Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum PRIMARY CHARACTERISTICS IF(AV) 5 A x 2 VRRM 100 V, 150 V, 200 V IFSM 55 A trr 25 ns VF 0.89 V TJ max. 150 °C TO-220AB U10xCT 1 2 3 UB10xCT 1 2 K TO-263AB UF10xCT ITO-220AB 1 2 3 CASE PIN 2 PIN 1 PIN 3 PIN 1 PIN 2 K HEATSINK PIN 2 PIN 1 PIN 3 MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL U(F,B)10BCT U(F,B)10CCT U(F,B)10DCT UNIT Maximum repetitive peak reverse voltage VRRM 100 150 200 V Max. average forward rectified current (Fig. 1) total device per diode IF(AV) 10 5 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 55 A Electrostatic discharge capacitor voltage, human body model: C = 150 pF, R = 1.5 k Ω (contact mode) VC 8kV Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min per diode VAC 1500 V Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C |
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