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TPB Datasheet(PDF) 2 Page - STMicroelectronics

No. de Pieza. TPB
Descripción  TRISIL
Descarga  5 Pages
Scroll/Zoom Zoom In 100% Zoom Out
Fabricante  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
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TPB Datasheet(HTML) 2 Page - STMicroelectronics

   
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Symbol
Parameter
Value
Unit
Rth (j-l)
Junction to leads (Llead = 10mm)
20
°C/W
Rth (j-a)
Junction to ambient on printed circuit (Llead = 10 mm)
75
°C/W
THERMAL RESISTANCES
Type
IRM @VRM
IR @VR
VBO @IBO
IH
C
max.
max.
note1
max.
note2
min.
note3
max.
note4
µAV
µAV
V
mA
mA
pF
TPB62
TPB68
TPB100
TPB120
TPB130
TPB180
TPB200
TPB220
TPB240
TPB270
2
2
2
2
2
2
2
2
2
2
56
61
90
108
117
162
180
198
216
243
50
50
50
50
50
50
50
50
50
50
62
68
100
120
130
180
200
220
240
270
82
90
133
160
173
240
267
293
320
360
800
800
800
800
800
800
800
800
800
800
150
150
150
150
150
150
150
150
150
150
300
300
200
200
200
200
200
200
200
200
Note 1:
IR measured at VR guarantees VBRmin
≥ VR
Note 2:
Measured at 50 Hz (1 cycle) - See test circuit 1.
Note 3:
See test circuit 2.
Note 4:
VR = 1V, F = 1MHz, refer to fig.3 for C versus VR.
Symbol
Parameter
VRM
Stand-off voltage
IRM
Leakage current at stand-off voltage
VR
Continuous Reverse voltage
VBR
Breakdown voltage
VBO
Breakover voltage
IH
Holding current
IBO
Breakover current
IPP
Peak pulse current
C
Capacitance
ELECTRICAL CHARACTERISTICS
(Tamb =25
°C)
Symbol
Parameter
Value
Unit
P
Power dissipation on infinite heatsink
Tamb =50
°C5
W
IPP
Peak pulse current
10/1000
µs
8/20
µs
2/10
µs
100
150
500
A
ITSM
Non repetitive surge peak on-state current
tp = 20 ms
50
A
I
2tI2t value for fusing
tp = 20 ms
25
A
2s
dV/dt
Critical rate of rise of off-state voltage
VRM
5kV/
µs
Tstg
Tj
Storage temperature range
Maximum junction temperature
- 55 to + 150
150
°C
°C
TL
Maximum lead temperature for soldering during 10s at 5mm for
case
230
°C
ABSOLUTE MAXIMUM RATINGS (Tamb =25
°C)
TPB SERIES
2/5


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