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TPA100 Datasheet(PDF) 2 Page - STMicroelectronics

No. de Pieza. TPA100
Descripción  TRISIL
Descarga  5 Pages
Scroll/Zoom Zoom In 100% Zoom Out
Fabricante  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
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TPA100 Datasheet(HTML) 2 Page - STMicroelectronics

   
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Symbol
Parameter
VRM
Stand-off voltage
IRM
Leakage current at stand-off voltage
VR
Continuous Reverse voltage
VBR
Breakdown voltage
VBO
Breakover voltage
IH
Holding current
IBO
Breakover current
IPP
Peak pulse current
C
Capacitance
ELECTRICAL CHARACTERISTICS
(Tamb =25
°C)
Symbol
Parameter
Value
Unit
Rth (j-l)
Junction to leads (Llead = 10mm)
60
°C/W
Rth (j-a)
Junction to ambient on printed circuit (Llead = 10 mm)
100
°C/W
THERMAL RESISTANCES
Note 1:
IR measured at VR guarantee VBRmin
≥ VR
Note 2:
Measured at 50 Hz (1 cycle) - See test circuit 1.
Note 3:
See test circuit 2.
Note 4:
VR = 1V, F = 1MHz. Refer to fig.3 for C versus VR.
Type
IRM @VRM
IR @VR
VBO @IBO
IH
C
max.
max.
note 1
max.
note 2
min.
note 3
max.
note 4
µAV
µAV
V
mA
mA
pF
TPA62
TPA68
TPA100
TPA120
TPA130
TPA180
TPA200
TPA220
TPA240
TPA270
2
2
2
2
2
2
2
2
2
2
56
61
90
108
117
162
180
198
216
243
50
50
50
50
50
50
50
50
50
50
62
68
100
120
130
180
200
220
240
270
82
90
133
160
173
240
267
293
320
360
800
800
800
800
800
800
800
800
800
800
150
150
150
150
150
150
150
150
150
150
150
150
100
100
100
100
100
100
100
100
Symbol
Parameter
Value
Unit
P
Power dissipation on infinite heatsink
Tamb =50
°C
1.7
W
IPP
Peak pulse current
10/1000
µs
8/20
µs
50
100
A
ITSM
Non repetitive surge peak on-state current
tp = 20 ms
30
A
I
2tI2t value for fusing
tp = 20 ms
9
A
2s
dV/dt
Critical rate of rise of off-state voltage
VRM
5
kV/
µs
Tstg
Tj
Storage temperature range
Maximum junction temperature
- 55 to + 150
150
°C
°C
TL
Maximum lead temperaturefor solderingduring 10s at 5mm from case
230
°C
ABSOLUTE MAXIMUM RATINGS (Tamb =25
°C)
TPA SERIES
2/5


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