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TPDV640 Datasheet(PDF) 3 Page - STMicroelectronics |
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TPDV640 Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 5 page Fig.1 : Maximum RMS power dissipation versus RMS on-state current (F=50Hz). (Curves are cut off by (dI/dt)c limitation) Fig.2 : Correlation between maximum RMS power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact. Fig.3 : RMS on-state current versus case temperature. 1E-3 1E-2 1E-1 1E +0 1 E+1 1 E+2 1 E+3 0.01 0.10 1.00 Zth/Rth Zth( j-c) Zt h( j-a ) tp (s ) Fig.4 : Relative variation of thermal impedance versus pulse duration. Fig.5 : Relative variation of gate trigger current and holding current versus junction temperature. Fig.6 : Non Repetitive surge peak on-state current versus number of cycles. TPDV 640 ---> 1240 3/5 |
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Descripción similar - TPDV640 |
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