ADS61B29IRGZR datasheet(6/61 Pages) TI

No. de pieza	ADS61B29IRGZR

Descripción Electrónicos	14-/12-Bit, 250-MSPS ADCs With Integrated Analog Buffer

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Fabricante Electrónico	TI [Texas Instruments]

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ELECTRICAL CHARACTERISTICS – ADS61B49 and ADS61B29

ADS61B29

ADS61B49

SLWS214A – OCTOBER 2008 – REVISED DECEMBER 2008 ......................................................................................................................................... www.ti.com

Typical values are at 25°C, AVDD = 3.3 V, DRVDD = 1.8 V, 50% clock duty cycle, –1 dBFS differential analog input, internal

reference mode unless otherwise noted.

Min and max values are across the full temperature range TMIN = –40°C to TMAX = 85°C, AVDD = 3.3 V, DRVDD = 1.8 V

ADS61B49/ADS61B29

250 MSPS

PARAMETER

UNIT

MIN

TYP

MAX

ANALOG INPUT

Differential input voltage range

2

VPP

Differential input resistance (at dc), See Figure 62

10

k

Ω

Differential input capacitance, See Figure 63

2

pF

Analog input bandwidth

750

MHz

Analog Input common-mode current (per input pin)

2

µA

VCM common-mode output voltage (different than ADS6149 family)

2.3

V

VCM output current capability

±4

mA

DC ACCURACY

Offset error

-15

±2

+15

mV

Temperature coefficient of offset error

0.005

mV/°C

Variation of offset error with supply

0.3

mV/V

EGREF

Gain error due to internal reference inaccuracy alone

-2.5

±0.2

+2.5

%FS

EGCHAN

Gain error of channel alone

0.2

%FS

Temperature coefficient of EGCHAN

.001

Δ%/°C

POWER SUPPLY

IAVDD

Analog supply current

200

mA

Output buffer supply current, LVDS interface with 100-

Ω external termination

70

mA

IDRVDD

Output buffer supply current, CMOS interface Fin = 3 MHz,

56

mA

10-pF external load capacitance

Analog power

660

730

mW

Digital power LVDS interface

130

160

mW

Digital power CMOS interface, Fin = 3 MHz, 10-pF external load capacitance

101

mW

Global power down

20

75

mW

Standby

120

mW

6

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