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TPS78227DDCR Datasheet(PDF) 2 Page - Texas Instruments

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No. de pieza TPS78227DDCR
Descripción Electrónicos  150mA, Ultra-Low Quiescent Current, IQ 1mA Low-Dropout Linear Regulator
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Fabricante Electrónico  TI [Texas Instruments]
Página de inicio  http://www.ti.com
Logo TI - Texas Instruments

TPS78227DDCR Datasheet(HTML) 2 Page - Texas Instruments

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ABSOLUTE MAXIMUM RATINGS
(1)
DISSIPATION RATINGS
TPS782xx
SBVS115A – AUGUST 2008 – REVISED SEPTEMBER 2008 ........................................................................................................................................... www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
ORDERING INFORMATION(1)(2)
PRODUCT
VOUT
TPS782xxyyyz
XX is the nominal output voltage
YYY is the package designator.
Z is the tape and reel quantity (R = 3000, T = 250).
(1)
For the most current package and ordering information see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com.
(2)
Additional output voltage combinations are available on a quick-turn basis using innovative, factory EEPROM programming.
Minimum-order quantities apply; contact your sales representative for details and availability
At TJ = –40°C to +125°C, unless otherwise noted. All voltages are with respect to GND.
PARAMETER
TPS782xx
UNIT
Input voltage range, VIN
–0.3 to +6.0
V
Enable
–0.3 to VIN + 0.3V
V
Output voltage range, VOUT
–0.3 to VIN + 0.3V
V
Maximum output current, IOUT
Internally limited
Output short-circuit duration
Indefinite
Total continuous power dissipation, PDISS
See the Dissipation Ratings table
Human body model (HBM)
2
kV
ESD rating
Charged device model (CDM)
500
V
Operating junction temperature range, TJ
–40 to +125
°C
Storage temperature range, TSTG
–55 to +150
°C
(1)
Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not implied.
DERATING FACTOR
BOARD
PACKAGE
RθJC
RθJA
ABOVE TA = +25°C
TA < +25°C
TA = +70°C
TA = +85°C
High-K(1)
DRV
20°C/W
65°C/W
15.4mW/°C
1540mW
845mW
615mW
High-K(1)
DDC
90°C/W
200°C/W
5.0mW/°C
500mW
275mW
200mW
(1)
The JEDEC high-K (2s2p) board used to derive this data was a 3-inch × 3-inch, multilayer board with 1-ounce internal power and
ground planes and 2-ounce copper traces on top and bottom of the board.
2
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Copyright © 2008, Texas Instruments Incorporated


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