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VN02ANSP Datasheet(PDF) 5 Page - STMicroelectronics

No. de Pieza. VN02ANSP
Descripción  HIGH SIDE SMART POWER SOLID STATE RELAY
Descarga  9 Pages
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Fabricante  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
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VN02ANSP Datasheet(HTML) 5 Page - STMicroelectronics

   
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FUNCTIONAL DESCRIPTION
The device has a diagnostic output which
indicates over temperature conditions.
The truth table shows input, diagnostic output
status and
output voltage level in
normal
operation and fault conditions. The output signals
are processed by internal logic.
To protect the device against short circuit and
over current conditions, the thermal protection
turns the integrated Power MOS off at a minimum
junction temperature of 140
oC. When the
temperature returns to 125
oC the switch is
automatically turned on again. To ensure the
protection in all VCC conditions and in all the
junction temperature range it is necessary to limit
the voltage drop across Drain and Source (pin 3
and 5) at 28V according to:
Vds =VCC -IOV *(Ri +Rw +Rl)
where:
Ri = internal resistence of Power Supply
Rw = Wires resistance
Rl = Short Circuit resistance
Driving inductive loads, an internal function of the
device ensures the fast demagnetization with
typical voltage (Vdemag) of -18V.
This function allows the reduction of the power
dissipation according to the formula:
Pdem = 0.5 * Lload *(Iload)
2 * [(VCC +Vdem)/Vdem]* f
where f = Switching Frequency
Based on this formula it is possible to know the
value of inductance and/or current to avoid a
thermal shut-down.
PROTECTING THE DEVICE AGAINST RE-
VERSE BATTERY
The simpliest way to protect the device against a
continuous reverse battery voltage (-36V) is to
insert a Schottky diode between pin 1 (GND) and
ground, as shown in the typical application circuit
(Fig. 3). The consequences of the voltage drop
across this diode are as follows:
If the input is pulled to power GND, a negative
voltage of -Vf is seen by the device. (Vil,Vih
thresholds and Vstat are increased by Vf with
respect to power GND).
The undervoltage shut-down level is increased by
Vf.
If there is no need for the control unit to handle
external analog signals referred to the power
GND, the best approach is to connect the
reference potential of the control unit to node [1]
(see application circuit in fig. 4), which becomes
the common signal GND for the whole control
board avoiding shift of Vih,Vil and Vstat. This
solution allows the use of a standard diode.
Figure 2: Over Current Test Circuit
VN02ANSP
5/9


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